| Manufacturer | Part # | Datasheet | Description |
 Advanced Power Electron... |
AP9575GH
|
103Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9575GH-HF
|
103Kb/4P |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
|
AP9575GH-HF
|
108Kb/5P |
Simple Drive Requirement
|
 VBsemi Electronics Co.,... |
AP9575GH-HF
|
988Kb/8P |
P-Channel 60-V (D-S) MOSFET
|
 Advanced Power Electron... |
AP9575GH-HF
|
103Kb/4P |
Simple Drive Requirement
|
|
AP9575GH-HF
|
108Kb/5P |
Simple Drive Requirement
|
|
AP9575GI
|
60Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9575GI-HF
|
100Kb/4P |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9575GI-HF
|
100Kb/4P |
Simple Drive Requirement
|
|
AP9575GI-HF
|
99Kb/5P |
Fast Switching Characteristic
|
|
AP9575GI
|
99Kb/4P |
Lower Gate Charge, Simple Drive Requirement
|
|
AP9575GJ
|
103Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9575GJ-HF
|
103Kb/4P |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP9575GJ-HF
|
108Kb/5P |
Simple Drive Requirement
|
 VBsemi Electronics Co.,... |
AP9575GJ-HF
|
976Kb/7P |
P-Channel 4 0 V (D-S) MOSFET
|
 Advanced Power Electron... |
AP9575GJ-HF
|
103Kb/4P |
Simple Drive Requirement
|
 SHENZHEN DOINGTER SEMIC... |
AP9575GM-HF
|
646Kb/4P |
P-Channel MOSFET uses advanced trench technology
|
 Advanced Power Electron... |
AP9575GM-HF
|
63Kb/4P |
Simple Drive Requirement
|
|
AP9575GM-HF
|
53Kb/5P |
Fast Switching Characteristic
|
|
AP9575GP-HF
|
103Kb/4P |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|