| Manufacturer | Part # | Datasheet | Description |
 Sanyo Semicon Device |
2SJ272
|
81Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ273
|
82Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ275
|
88Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ276
|
85Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ277
|
88Kb/3P |
Very High-Speed Switching Applications
|
 Hitachi Semiconductor |
2SJ278
|
42Kb/8P |
Silicon P-Channel MOS FET
|
 Renesas Technology Corp |
2SJ278
|
78Kb/7P |
Silicon P Channel MOS FET
|
 TECH PUBLIC Electronics... |
2SJ278-TP
|
3Mb/5P |
P-Channel Enhancement MOSFET
|
 Renesas Technology Corp |
2SJ278MYTL-E
|
78Kb/7P |
Silicon P Channel MOS FET
|
|
2SJ278MYTR-E
|
78Kb/7P |
Silicon P Channel MOS FET
|
|
2SJ278
|
97Kb/9P |
Silicon P Channel MOS FET
|
 Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
 Inchange Semiconductor ... |
2SJ200
|
313Kb/2P |
isc P-Channel MOSFET Transistor
|
 Toshiba Semiconductor |
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ201
|
182Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|