| Manufacturer | Part # | Datasheet | Description |
Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
Inchange Semiconductor ... |
2SJ200
|
313Kb/2P |
isc P-Channel MOSFET Transistor
|
Toshiba Semiconductor |
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ201
|
182Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
275Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
269Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
Inchange Semiconductor ... |
2SJ201
|
503Kb/2P |
isc P-Channel MOSFET Transistor
|
Toshiba Semiconductor |
2SJ201-Y
|
269Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
275Kb/5P |
High-Power Amplifier Application
|
NEC |
2SJ202
|
406Kb/6P |
P-CHANNEL MOS FET FOR SWITCHING
|
Renesas Technology Corp |
2SJ202
|
505Kb/7P |
MOS FIELD EFFECT TRANSISTOR
2006 |
NEC |
2SJ203
|
241Kb/8P |
MOS FIELD EFFECT TRANSISTOR
|
Guangdong Kexin Industr... |
2SJ203
|
42Kb/1P |
MOS Fied Effect Transistor
|
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