| Manufacturer | Part # | Datasheet | Description |
Rohm |
2SC5730
|
57Kb/4P |
Medium power transistor (30V, 1.0A)
|
|
2SC5730K
|
59Kb/4P |
Medium power transistor (30V, 1A)
|
Renesas Technology Corp |
2SC5736
|
335Kb/32P |
NPN SILICON RF TWIN TRANSISTOR
2001 |
|
2SC5737
|
335Kb/32P |
NPN SILICON RF TWIN TRANSISTOR
2001 |
|
2SC5737
|
322Kb/30P |
NPN SILICON RF TWIN TRANSISTOR
2002 |
|
2SC5737
|
323Kb/30P |
NPN SILICON RF TWIN TRANSISTOR
2002 |
Toshiba Semiconductor |
2SC5738
|
134Kb/5P |
High-Speed Switching Applications
|
Panasonic Semiconductor |
2SC5739
|
79Kb/3P |
Silicon NPN epitaxial planar type
|
Toshiba Semiconductor |
2SC570
|
39Kb/1P |
2SC790
|
Hitachi Semiconductor |
2SC5700
|
102Kb/10P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Renesas Technology Corp |
2SC5700
|
192Kb/9P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
|
2SC5700WB-TR-E
|
192Kb/9P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Hitachi Semiconductor |
2SC5702
|
109Kb/16P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
Renesas Technology Corp |
2SC5702
|
277Kb/15P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
|
2SC5702ZS-TL-E
|
277Kb/15P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
Toshiba Semiconductor |
2SC5703
|
166Kb/5P |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
|
2SC5703
|
137Kb/5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
10-Nov-2006 |
|
2SC5703
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SC5703
|
165Kb/5P |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2016-09-27 |
|
2SC5703
|
137Kb/5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
10-Nov-2006 |
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