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2N7000 Datasheet, PDF

Search Partnumber : Match&Start with "2N7000" - Total : 108 ( 1/6 Page)

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	2N7000	64Kb/6P	N-Channel 60-V (D-S) MOSFET 16-Jul-01
NXP Semiconductors	2N7000	76Kb/12P	N-channel enhancement mode vertical D-MOS transistor April 1995
Microchip Technology	2N7000	762Kb/14P	N-Channel Enhancement-Mode Vertical DMOS FET 02/28/20
ON Semiconductor	2N7000	372Kb/13P	N-Channel Enhancement Mode Field Effect Transistor April, 2024 - Rev. 10
Vishay Siliconix	2N7000	51Kb/5P	N-Channel 60-V (D-S) MOSFET 16-Jul-01
Vishay Siliconix	2N7000	68Kb/7P	N-Channel 60-V (D-S) MOSFET 16-Jul-01
SEMTECH ELECTRONICS LTD...	2N7000	148Kb/2P	Small Signal MOSFET
General Semiconductor	2N7000	232Kb/5P	DMOS Transistors (N-Channel)
ON Semiconductor	2N7000	60Kb/4P	Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 November, 2000 ??Rev. 5
Vishay Siliconix	2N7000	64Kb/6P	N-Channel 60-V (D-S) MOSFET 16-Jul-01
Diodes Incorporated	2N7000	22Kb/1P	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET NOVEMBER 1994
STMicroelectronics	2N7000	383Kb/14P	N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET 19-Jun-2006
ON Semiconductor	2N7000	57Kb/4P	Small Signal MOSFET 200 mAmps, 60 Volts N?묬hannel TO??2 200 mAMPS 60 VOLTS March, 2007 ??Rev. 6
Vishay Siliconix	2N7000	64Kb/6P	N-Channel 60-V (D-S) MOSFET 16-Jul-01
STMicroelectronics	2N7000	355Kb/14P	N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET??Power MOSFET 03-Sep-2007
Supertex, Inc	2N7000	524Kb/5P	N-Channel Enhancement-Mode Vertical DMOS FETs
Dc Components	2N7000	216Kb/1P	TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET
SeCoS Halbleitertechnol...	2N7000	358Kb/3P	N-Channel Enhancement Mode Power Mos.FET
Weitron Technology	2N7000	173Kb/4P	Small Signal MOSFET N-Channel
Motorola, Inc	2N7000	77Kb/4P	CASE 29-04, STYLE 22 TO-92 (TO-226AA)

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Brief Description of 2N7000

2N7000 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that is commonly used in electronic circuits for various applications such as switching, amplification, and voltage regulation.

The 2N7000 MOSFET has a maximum voltage rating of 60V and a maximum current rating of 200mA. It also has a low gate threshold voltage of 2.1V, which means it can be easily controlled with low-level signals.

Because of its small size, low on-resistance, and high switching speed, the 2N7000 MOSFET is often used in low-power applications where fast switching speeds and low power dissipation are important. It is commonly used in circuits that require switching high-speed signals, such as in LED drivers, DC-DC converters, and battery chargers.

Equivalent for 2N7000

2N7000 is an N-channel MOSFET transistor with a maximum drain-source voltage of 60V and a maximum continuous drain current of 200mA. If you're looking for a replacement for the 2N7000, there are several alternatives available in the market. Here are a few options you could consider:

2N7002: This is a direct replacement for the 2N7000, with similar electrical characteristics and pin configuration. It has a maximum drain-source voltage of 60V and a maximum continuous drain current of 270mA.

BS170: This is another N-channel MOSFET transistor that can replace the 2N7000. It has a maximum drain-source voltage of 60V and a maximum continuous drain current of 500mA, which makes it suitable for higher power applications.

IRF510: This is a power N-channel MOSFET transistor that can also replace the 2N7000. It has a maximum drain-source voltage of 100V and a maximum continuous drain current of 5.6A, which makes it suitable for high-power applications. However, it has a different pin configuration and package type, which may require some modifications to your PCB layout.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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