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Shortcut   2N60(2362) recommended result.
Match, Like  82N60(1) 22N60(2) 12N60(15) 2N60(23) L2N60(1) I2N60(7) F2N60(7) B2N60(6) D2N60(6) E2N60(6) 2N60A(1) 2N60B(1) 2N60D(1) 2N60E(1) 2N60F(1) 2N60G(1) 2N60H(1) 2N60I(1) 2N60K(2) 2N60L(2) 2N60M(1) 2N60N(1) 2N60P(1) 2N60S(1) 2N60T(1) 2N60Z(1)
Start with  2N60*(944) 2N60-*(20) 2N602*(54) 2N603*(118) 2N604*(100) 2N605*(137) 2N606*(10) 2N607*(103) 2N608*(18) 2N609*(26) 2N60A*(1) 2N60B*(1) 2N60D*(7) 2N60E*(3) 2N60F*(4) 2N60G*(70) 2N60H*(1) 2N60K*(62) 2N60L*(164) 2N60M*(6) 2N60N*(3) 2N60Z*(18)
End  *2N60(288) *02N60(35) *D2N60(24) *12N60(62) *F2N60(22) *U2N60(15) *B2N60(4) *I2N60(6) *P2N60(17) *S2N60(3) *32N60(4) *V2N60(2) *T2N60(5) *M2N60(4) *42N60(1) *R2N60(3) *W2N60(3) *L2N60(4) *22N60(9) *Q2N60(1) *72N60(2) *J2N60(2) *A2N60(1) *Y2N60(2) *X2N60(1) *E2N60(1) *K2N60(1) *82N60(1) *52N60(2)
Included  *2N60*(1102) *2N60A*(3) *2N60C*(2) *2N60D*(2) *2N60G*(18) *2N60H*(9) *2N60K*(7) *2N60L*(18) *2N60S*(6) *2N60_*(6)
Manufacturer


2N60 Datasheet, PDF

Search Partnumber : Match&Start with "2N60" - Total : 972 ( 1/49 Page)
ManufacturerPart #DatasheetDescription
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Unisonic Technologies
2N60 UTC-2N60 Datasheet
142Kb/8P
2 Amps, 600 Volts N-CHANNEL MOSFET
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Estek Electronics Co. L...
2N60 ESTEK-2N60 Datasheet
573Kb/5P
N2 Amps竊?00Volts N-Channel MOSFET
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Unisonic Technologies
2N60 UTC-2N60 Datasheet
224Kb/6P
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
2N60 UTC-2N60 Datasheet
245Kb/6P
2A, 600V N-CHANNEL POWER MOSFET
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Nell Semiconductor Co.,...
2N60 NELLSEMI-2N60 Datasheet
391Kb/8P
N-Channel Power MOSFET
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Inchange Semiconductor ...
2N60 ISC-2N60 Datasheet
157Kb/2P
Fast Switching
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Chongqing Pingwei Enter...
2N60 CHONGQING-2N60 Datasheet
201Kb/2P
2A mps,600 Volts N-CHANNEL MOSFET
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DIYI Electronic Technol...
2N60 DYELEC-2N60 Datasheet
1Mb/9P
600V N-Channel Power MOSFET
logo
Zibo Seno Electronic En...
2N60 ZSELEC-2N60 Datasheet
450Kb/6P
N-CHANNEL MOSFET
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Inchange Semiconductor ...
2N60 ISC-2N60 Datasheet
316Kb/2P
isc N-Channel MOSFET Transistor
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SUNMATE electronic Co.,...
2N60 SUNMATE-2N60 Datasheet
2Mb/8P
N-CHANNEL POWER MOSFET
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ARTSCHIP ELECTRONICS CO...
2N60 ARTSCHIP-2N60 Datasheet
389Kb/7P
N-CHANNEL MOSFET
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VBsemi Electronics Co.,...
2N60 VBSEMI-2N60 Datasheet
1Mb/9P
Power MOSFET
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Jiangsu High diode Semi...
2N60 HDSEMI-2N60 Datasheet
2Mb/3P
TO-251 Plastic-Encapsulate MOSFET
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Guangdong Kexin Industr...
2N60 KEXIN-2N60 Datasheet
60Kb/2P
N-Channel MOSFET
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Jiangsu Donghai Semicon...
2N60 WXDH-2N60 Datasheet
1Mb/13P
2A 600V N-channel Enhancement Mode Power MOSFET
2N60 WXDH-2N60 Datasheet
1Mb/13P
2A 600V N-channel Enhancement Mode Power MOSFET
2N60 WXDH-2N60 Datasheet
1Mb/13P
2A 600V N-channel Enhancement Mode Power MOSFET
2N60 WXDH-2N60 Datasheet
1Mb/13P
2A 600V N-channel Enhancement Mode Power MOSFET
2N60 WXDH-2N60 Datasheet
1Mb/13P
2A 600V N-channel Enhancement Mode Power MOSFET

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Brief Description of 2N60


The 2N60 is an N-Channel MOSFET that is optimized for high voltage power applications, offering features such as fast switching, low gate charge, and low on-state resistance. It is also designed to withstand rugged avalanche conditions. These features make it commonly used in power supplies, PWM motor controls, DC to DC converters, and bridge circuits.

Here is a summary of the 2N60's characteristics:

Drain to Source Voltage (V_DSS): It can tolerate up to 600V, which is the maximum voltage between the drain and source when the MOSFET is turned off.

Gate to Source Voltage (V_GSS): It supports a gate to source voltage of ±30V.

Drain Current (I_D): The 2N60 can sustain a drain current of 2A, indicating the maximum current that can flow through the drain terminal continuously.

Power Dissipation (P_D): It has a power dissipation rating of 23W, dictating how much power it can handle before exceeding the maximum junction temperature.

Junction Temperature (T_J): The operating junction temperature can reach up to 150°C.

Storage Temperature (T_stg): The component can be stored at temperatures ranging from -55 to +150°C.

For specific implementations, the device offers a low on-resistance of 3.8Ω at a V_GS of 10V. The low gate charge (typical at 9.0nC) and low reverse transfer capacitance (Crss = typical 5.0 pF) facilitate fast switching and improved efficiency. These specifications are geared towards ensuring that the MOSFET can provide the required performance in power management tasks with efficiency and reliability.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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