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2N5551 Datasheet, PDF

Search Partnumber : Match&Start with "2N5551" - Total : 171 ( 1/9 Page)

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	2N5551	188Kb/6P	mplifier Transistors(NPN Silicon) June, 2004 ??Rev. 3
Semtech Corporation	2N5551	131Kb/2P	NPN Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications????
ON Semiconductor	2N5551	323Kb/11P	NPN General-Purpose Amplifier June 2013 Rev. 1.1.0
NXP Semiconductors	2N5551	59Kb/7P	NPN high-voltage transistors 2004 Oct 28
ON Semiconductor	2N5551	71Kb/6P	Amplifier Transistors June, 2004 ??Rev. 3
Micro Electronics	2N5551	165Kb/2P	COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS
AUK corp	2N5551	199Kb/3P	NPN Silicon Transistor (General purpose amplifier High voltage application)
Motorola, Inc	2N5551	188Kb/6P	Amplifier Transistors
TRANSYS Electronics Lim...	2N5551	66Kb/2P	TO-92 Plastic-Encapsulated Transistors
KEC(Korea Electronics)	2N5551	146Kb/2P	EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)
Central Semiconductor C...	2N5551	59Kb/1P	Small Signal Transistors TO-92 Case (Continued)
Avic Technology	2N5551	47Kb/1P	NPN General Purpose Amplifier
Weitron Technology	2N5551	171Kb/4P	NPN Transistors
Unisonic Technologies	2N5551	53Kb/4P	HIGH VOLTAGE SWITCHING TRANSISTOR
Diotec Semiconductor	2N5551	106Kb/2P	General Purpose Si-Epitaxial Planar Transistors
TAITRON Components Inco...	2N5551	155Kb/4P	Small Signal High Voltage Transistor (NPN)
Dc Components	2N5551	213Kb/1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
SeCoS Halbleitertechnol...	2N5551	207Kb/2P	NPN Silicon General Purpose Transistor
Daya Electric Group Co....	2N5551	693Kb/1P	TO-92 Plastic-Encapsulate Transistors
Daya Electric Group Co....	2N5551	83Kb/6P	Amplifier Transistors

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Brief Description of 2N5551

2N5551 is a general-purpose NPN bipolar junction transistor (BJT) commonly used in amplifier and switching applications. It has a maximum current gain (hFE) of 400, a collector current (IC) rating of 600mA, and a maximum collector-emitter voltage (VCEO) of 160V.

Some of the technical specifications of 2N5551 are:

Maximum collector current (IC): 600mA
Maximum collector-emitter voltage (VCEO): 160V
Maximum emitter-base voltage (VEBO): 6V
Maximum DC current gain (hFE): 400
Maximum power dissipation (Ptot): 625mW
Operating temperature range: -55°C to +150°C
Package: TO-92, SOT-223

2N5551 is commonly used in low-power amplifier circuits, switching circuits, and voltage regulator circuits. Its low cost, high current gain, and high voltage rating make it a popular choice for many electronic designs.

Equivalent for 2N5551

2N5551 is a PNP bipolar junction transistor (BJT) commonly used in low to medium power amplifier and switching circuits.

Here are some possible replacements for 2N5551:

2N3906: This is a widely used general-purpose PNP transistor, suitable for low-power amplifier and switching applications. It has similar electrical characteristics to 2N5551 and is often used as a drop-in replacement.

BC560: This is a general-purpose PNP transistor, similar to 2N5551 but with slightly higher current and power ratings. It is commonly used in low to medium power amplifier and switching circuits.

MPSA92: This is a high voltage, high current PNP transistor with similar electrical characteristics to 2N5551. It is commonly used in high power amplifier and switching circuits.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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