| Manufacturer | Part # | Datasheet | Description |
 Microsemi Corporation |
2N3636
|
57Kb/2P |
PNP SILICON AMPLIFIER TRANSISTOR
|
|
2N3636
|
233Kb/5P |
RADIATION HARDENED
|
|
2N3636
|
174Kb/5P |
PNP SILICON SWITCHING TRANSISTOR
|
 ON Semiconductor |
2N3636
|
81Kb/6P |
Low Power Transistors
November, 2013 ??Rev. 1 |
 Boca Semiconductor Corp... |
2N3636
|
219Kb/6P |
GENERAL PURPOSE TRANSISTOR (PNP SILICON)
|
 Seme LAB |
2N3636
|
15Kb/1P |
Bipolar PNP Device in a Hermetically sealed TO39
|
 Comset Semiconductor |
2N3636
|
77Kb/3P |
SILICON PLANAR RF TRANSISTORS
|
 Continental Device Indi... |
2N3636
|
252Kb/4P |
PNP SILICON PLANAR RF TRANSISTORS
|
 Microsemi Corporation |
2N3636L
|
57Kb/2P |
PNP SILICON AMPLIFIER TRANSISTOR
|
|
2N3636L
|
233Kb/5P |
RADIATION HARDENED
|
|
2N3636L
|
174Kb/5P |
PNP SILICON SWITCHING TRANSISTOR
|
 ON Semiconductor |
2N3636L
|
81Kb/6P |
Low Power Transistors
November, 2013 ??Rev. 1 |
 Microsemi Corporation |
2N3636UB
|
233Kb/5P |
RADIATION HARDENED
|
|
2N3636UB
|
174Kb/5P |
PNP SILICON SWITCHING TRANSISTOR
|