| Manufacturer | Part # | Datasheet | Description |
 New Jersey Semi-Conduct... |
2N1650
|
43Kb/1P |
2N1647 - 2N1650
|
|
2N1651
|
133Kb/1P |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
|
2N1653
|
133Kb/1P |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
|
2N1600
|
140Kb/1P |
SILICON PNPN CONTROLLED RECTIFIER
|
|
2N1604
|
112Kb/1P |
SCR, V (DRM) = 400 V TO 499.9 V
|
 List of Unclassifed Man... |
2N1605
|
2Mb/6P |
GERMANIUM PNP TRANSISTORS
|
|
2N1605
|
267Kb/3P |
alloy-junction germanium transistors
|
|
2N1605A
|
2Mb/6P |
GERMANIUM PNP TRANSISTORS
|
 NXP Semiconductors |
2N1613
|
51Kb/8P |
NPN medium power transistor
1997 Apr 11 |
 STMicroelectronics |
2N1613
|
61Kb/5P |
SWITCHES AND UNIVERSAL AMPLIFIERS
Jan-1989 |
 Fairchild Semiconductor |
2N1613
|
378Kb/10P |
NPN Small Signal General Purpose Amplifiers
|
 Micro Electronics |
2N1613
|
92Kb/2P |
NPN LISICON PLANAR EPITAXIAL TRANSISTORS
|
 Microsemi Corporation |
2N1613
|
59Kb/2P |
NPN LOW POWER SILICON TRANSISTOR
|
 Comset Semiconductor |
2N1613
|
214Kb/3P |
SILICON PLANAR EPITAXIAL TRANSISTORS
|
 Seme LAB |
2N1613
|
16Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO39
|
 New Jersey Semi-Conduct... |
2N1613
|
153Kb/1P |
Diode TP-39
|
 Comset Semiconductor |
2N1613
|
84Kb/3P |
SILICON PLANAR EPITAXIAL TRANSISTORS
|
 Continental Device Indi... |
2N1613
|
229Kb/4P |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
|
 Central Semiconductor C... |
2N1613
|
506Kb/2P |
SILICON NPN TRANSISTOR
|
 New Jersey Semi-Conduct... |
2N1613
|
98Kb/1P |
Quality Semi-Conductors
|