| Manufacturer | Part # | Datasheet | Description |
 GREATECS |
TPN
|
325Kb/1P
|
SPST THT Tactile Switches with LED
|
 Turck, Inc. |
TPN-104A-H01-L2000-I100
|
635Kb/2P
|
Temperature Detection – Insertion Probe
11/08/2023
|
 Europa PLC |
TPN03SPD12M
|
629Kb/2P
|
TPN 3 PHASE BOARDS (125A) inc. TYPE 1/2 SPD and ISOLATOR PREWIRED
|
|
TPN03SPD2MCB
|
745Kb/2P
|
TPN 3 Phase Boards (125A) inc. TYPE 2 SPD and MCB PREWIRED
|
|
TPN05SPD12M
|
629Kb/2P
|
TPN 3 PHASE BOARDS (125A) inc. TYPE 1/2 SPD and ISOLATOR PREWIRED
|
|
TPN05SPD2MCB
|
745Kb/2P
|
TPN 3 Phase Boards (125A) inc. TYPE 2 SPD and MCB PREWIRED
|
|
TPN07SPD12M
|
629Kb/2P
|
TPN 3 PHASE BOARDS (125A) inc. TYPE 1/2 SPD and ISOLATOR PREWIRED
|
|
TPN07SPD2MCB
|
745Kb/2P
|
TPN 3 Phase Boards (125A) inc. TYPE 2 SPD and MCB PREWIRED
|
|
TPN09SPD12M
|
629Kb/2P
|
TPN 3 PHASE BOARDS (125A) inc. TYPE 1/2 SPD and ISOLATOR PREWIRED
|
|
TPN09SPD2MCB
|
745Kb/2P
|
TPN 3 Phase Boards (125A) inc. TYPE 2 SPD and MCB PREWIRED
|
 Toshiba Semiconductor |
TPN11003NL
|
236Kb/9P
|
MOSFETs Silicon N-channel MOS
2014-02-18 Rev.3.0
|
 SHENZHEN DOINGTER SEMIC... |
TPN11003NL
|
1Mb/4P
|
N-Channel MOSFET uses advanced trench technology to minimize on-state resistance
|
 Toshiba Semiconductor |
TPN11006NL
|
238Kb/9P
|
MOSFETs Silicon N-channel MOS
2014-02-27 Rev.2.0
|
|
TPN11006PL
|
457Kb/9P
|
MOSFETs Silicon N-channel MOS
2016-09-20 Rev.1.0
|
|
TPN1110ENH
|
238Kb/9P
|
MOSFETs Silicon N-channel MOS
2014-02-27 Rev.2.0
|
|
TPN11NL
|
236Kb/9P
|
MOSFETs Silicon N-channel MOS
2014-02-18 Rev.3.0
|
 Europa PLC |
TPN11SPD12M
|
629Kb/2P
|
TPN 3 PHASE BOARDS (125A) inc. TYPE 1/2 SPD and ISOLATOR PREWIRED
|
|
TPN11SPD2MCB
|
745Kb/2P
|
TPN 3 Phase Boards (125A) inc. TYPE 2 SPD and MCB PREWIRED
|
 Toshiba Semiconductor |
TPN12008QM
|
496Kb/9P
|
Silicon N-channel MOS (U-MOS-H)
2020-02-18 Rev.1.0
|
|
TPN1200APL
|
523Kb/9P
|
Silicon N-channel MOS (U-MOS??H)
2019-10-18 Rev.2.0
|