| Manufacturer | Part # | Datasheet | Description |
 TiMOTION Technology Co.... |
TBB10
|
209Kb/3P
|
Capacity 25.2V DC / 2500mAh
20231219-D
|
 Hitachi Semiconductor |
TBB1002
|
66Kb/11P
|
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
 Renesas Technology Corp |
TBB1002
|
105Kb/10P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1002BMTL-E
|
105Kb/10P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1002
|
105Kb/10P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1002
|
125Kb/9P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
 Hitachi Semiconductor |
TBB1004
|
63Kb/11P
|
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
 Renesas Technology Corp |
TBB1004
|
105Kb/10P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1004DMTL-E
|
105Kb/10P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1004DMTL-E
|
125Kb/9P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1004DMTL-H
|
125Kb/9P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1004
|
105Kb/10P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1004
|
125Kb/9P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1005
|
105Kb/10P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1005EMTL-E
|
105Kb/10P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1005EMTL-E
|
125Kb/9P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1005EMTL-H
|
125Kb/9P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1005
|
125Kb/9P
|
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1008
|
218Kb/14P
|
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
|
TBB1010
|
76Kb/10P
|
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|