| Manufacturer | Part # | Datasheet | Description |
 SamHop Microelectronics... |
STS6601
|
168Kb/7P
|
P-Channel Enhancement Mode Field Effect Transistor
|
 VBsemi Electronics Co.,... |
STS6601
|
454Kb/9P
|
P-Channel 60-V (D-S) MOSFET
|
| Search Partnumber :
Start with "STS6601" -
Total : 110 ( 1/6 Page) |
 SamHop Microelectronics... |
STS6604L
|
244Kb/11P |
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
|
 VBsemi Electronics Co.,... |
STS6604L
|
613Kb/10P |
N- and P-Channel 20V (D-S) MOSFET
|
 SamHop Microelectronics... |
STS6308
|
177Kb/7P |
Super high dense cell design for low RDS(ON).
|
 VBsemi Electronics Co.,... |
STS6308
|
519Kb/9P |
N-Channel 60-V (D-S) MOSFET
|
 SamHop Microelectronics... |
STS6409
|
112Kb/7P |
Super high dense cell design for low RDS(ON).
|
|
STS6415
|
111Kb/7P |
Super high dense cell design for low RDS(ON).
|
 STMicroelectronics |
STS6DNF30L
|
83Kb/8P |
DUAL N - CHANNEL 30V - 0.022ohm - 6A SO-8 STripFET POWER MOSFET
Apr-1999 |
|
STS6DNF30V
|
267Kb/8P |
DUAL N-CHANNEL 30V - 0.026ohm - 6A SO-8 2.5V-DRIVE STripFET™ II POWER MOSFET
Jul-2002 |
 SamHop Microelectronics... |
STS6N20
|
96Kb/7P |
Super high dense cell design for low RDS(ON).
|
 VBsemi Electronics Co.,... |
STS6N20
|
519Kb/9P |
N-Channel 60-V (D-S) MOSFET
|
 STMicroelectronics |
STS6NF20V
|
256Kb/8P |
N-CHANNEL 20V - 0.030 ohm - 6A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET
Aug-2002 |
 Guangdong Kexin Industr... |
STS6NF20V
|
236Kb/4P |
N-Channel MOSFET
|
 VBsemi Electronics Co.,... |
STS6NF20V
|
928Kb/9P |
N-Channel 20V (D-S) MOSFET
|
 STMicroelectronics |
STS6P3LLH6
|
718Kb/15P |
High avalanche ruggedness
28-Nov-2013 |
|
STS6PF30L
|
295Kb/8P |
P-CHANNEL 30V - 0.027 ohm - 6A SO-8 STripFET™ POWER MOSFET
May-2003 |
 Connor-Winfield Corpora... |
STS-100
|
194Kb/8P |
Synchronous Timing Module
|
 Silonex Inc. |
STS-8831
|
25Kb/1P |
Dual Channel Optical Switch Assembly Over / Under Optical Axis
|