| Manufacturer | Part # | Datasheet | Description |
Stanson Technology |
STP4953
|
721Kb/8P
|
Dual P Channel Enhancement Mode MOSFET
|
VBsemi Electronics Co.,... |
STP4953
|
956Kb/9P
|
Dual P-Channel 30-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
STP4953
|
1Mb/5P
|
Dual P-Channel MOSFET uses advanced trench technology
|
VBsemi Electronics Co.,... |
STP4953AM-TRG
|
956Kb/9P
|
Dual P-Channel 30-V (D-S) MOSFET
|
|
STP4953AMTRG
|
956Kb/9P
|
Dual P-Channel 30-V (D-S) MOSFET
|
|
STP4953M-TRG
|
956Kb/9P
|
Dual P-Channel 30-V (D-S) MOSFET
|
|
STP4953MRG
|
956Kb/9P
|
Dual P-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
STP4953S8TG
|
721Kb/8P
|
Dual P Channel Enhancement Mode MOSFET
|
| Search Partnumber :
Start with "STP4953" -
Total : 100 ( 1/5 Page) |
VBsemi Electronics Co.,... |
STP4953AM-TRG
|
956Kb/9P |
Dual P-Channel 30-V (D-S) MOSFET
|
|
STP4953AMTRG
|
956Kb/9P |
Dual P-Channel 30-V (D-S) MOSFET
|
|
STP4953M-TRG
|
956Kb/9P |
Dual P-Channel 30-V (D-S) MOSFET
|
|
STP4953MRG
|
956Kb/9P |
Dual P-Channel 30-V (D-S) MOSFET
|
Stanson Technology |
STP4953S8TG
|
721Kb/8P |
Dual P Channel Enhancement Mode MOSFET
|
|
STP4925
|
577Kb/6P |
STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
SHENZHEN DOINGTER SEMIC... |
STP4925
|
1Mb/4P |
Dual P-Channel MOSFET uses advanced trench technology
|
Stanson Technology |
STP4931
|
334Kb/6P |
STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
STMicroelectronics |
STP400N4F6
|
181Kb/11P |
N-channel 40 V, 120 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAK and TO-220 packages
13-Aug-2012 |
Inchange Semiconductor ... |
STP400N4F6
|
372Kb/2P |
isc N-Channel MOSFET Transistor
|
VBsemi Electronics Co.,... |
STP40N03L
|
984Kb/7P |
N-Channel 30-V (D-S) MOSFET
|
STMicroelectronics |
STP40N03L-20
|
65Kb/7P |
N - CHANNEL ENHANCEMENT MODE U"LTRA HIGH DENSITY” POWER MOS TRANSISTOR
Mar-1996 |
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