| Manufacturer | Part # | Datasheet | Description |
 SeCoS Halbleitertechnol... |
SSD01L60
|
675Kb/4P
|
N-Channel Enhancement Mode Power Mos.FET
|
| Search Partnumber :
Start with "SSD01L60" -
Total : 20 ( 1/1 Page) |
 SeCoS Halbleitertechnol... |
SSD01N60
|
1Mb/5P |
N-Channel Enhancement Mode Power Mos.FET
|
|
SSD01N65J
|
175Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD02N60J
|
281Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD02N60SL
|
565Kb/5P |
N-Ch Enhancement Mode Power MOSFET
|
 VBsemi Electronics Co.,... |
SSD02N60SL
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
 SeCoS Halbleitertechnol... |
SSD02N60SL
|
565Kb/5P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD02N65
|
1Mb/4P |
2A , 650V , RDS(ON) 8 N-Ch Enhancement Mode Power MOSFET
|
|
SSD02N65SL
|
544Kb/5P |
N-Ch Enhancement Mode Power MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
SSD02N65SL
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
SSD02N65SL
|
1Mb/9P |
N-Channel 650 V (D-S) MOSFET
|
 SeCoS Halbleitertechnol... |
SSD02N65SL
|
544Kb/5P |
N-Ch Enhancement Mode Power MOSFET
|
|
SSD04N60J
|
161Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
SSD04N60SL
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
SSD04N60SL
|
1Mb/9P |
Power MOSFET
|
|
SSD04N65
|
1Mb/9P |
Power MOSFET
|
 SeCoS Halbleitertechnol... |
SSD04N65J
|
294Kb/3P |
N-Ch Enhancement Mode Power MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
SSD04N65SL
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
SSD04N65SL
|
1Mb/9P |
Power MOSFET
|
 SHENZHEN DOINGTER SEMIC... |
SSD05N50SL
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|