| Manufacturer | Part # | Datasheet | Description |
 NXP Semiconductors |
SI4800
|
254Kb/13P
|
N-channel enhancement mode field-effect transistor
Rev. 01-13 July 2001
|
 Vishay Siliconix |
SI4800BDY
|
252Kb/9P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
|
SI4800BDY
|
252Kb/9P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
|
Si4800BDY
|
185Kb/8P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
|
SI4800BDY
|
184Kb/8P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
|
SI4800BDY-T1
|
252Kb/9P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
|
SI4800BDY-T1-E3
|
252Kb/9P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
 VBsemi Electronics Co.,... |
SI4800BDY-T1-E3
|
1,007Kb/9P
|
N-Channel 30-V (D-S) MOSFET
|
 Vishay Siliconix |
SI4800BDY
|
185Kb/8P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
|
SI4800BDY
|
184Kb/8P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
|
SI4800BD
|
184Kb/8P
|
N-Channel Reduced Qg, Fast Switching MOSFET
29-Dec-08
|
|
SI4800DY
|
56Kb/5P
|
N-Channel Reducded Qg, Fast Switching MOSFET
26-May-03
|
 VBsemi Electronics Co.,... |
SI4800DY-T1-E3
|
1,006Kb/9P
|
N-Channel 20V (D-S) MOSFET
|