| Manufacturer | Part # | Datasheet | Description |
 Yangzhou yangjie electr... |
S115
|
105Kb/2P
|
Schottky Rectifier
|
 RFE international |
S115
|
2Mb/3P
|
Surface Mount Schottky Rectifiers
11-14-2022
|
 Hamamatsu Corporation |
S11500-1007
|
453Kb/7P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm), back-thinned FFT-CCD
|
|
S11500-1007
|
513Kb/8P
|
CCD area image sensor
|
|
S11510
|
465Kb/8P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
|
S11510-1006
|
465Kb/8P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
|
S11510-1106
|
465Kb/8P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
|
S11510
|
465Kb/8P
|
Enhanced near infrared sensitivity: QE=40% (貫=1000 nm)
|
|
S11510
|
665Kb/7P
|
IR-enhanced CCD image sensors
|
|
S11519
|
571Kb/4P
|
Enhanced near IR sensitivity, using a MEMS technology
|
 Seiko Instruments Inc |
S1155
|
486Kb/28P
|
HIGH RIPPLE-REJECTION LOW DROPOUT
|
 Yangzhou yangjie electr... |
S115F
|
105Kb/2P
|
Schottky Rectifier
|
 ON Semiconductor |
S115FA
|
168Kb/6P
|
Schottky Barrier Rectifiers, Surface Mount, 1 A, 50 V - 150 V
March, 2022 - Rev. 3
|
|
S115FP
|
163Kb/6P
|
Surface Mount Schottky Barrier Rectifiers 1 A, 20 V - 150 V
August, 2024 - Rev. 3
|