| Manufacturer | Part # | Datasheet | Description |
 Renesas Technology Corp |
RJK0632JPD
|
124Kb/7P
|
Silicon N Channel MOS FET High Speed Power Switching
|
 VBsemi Electronics Co.,... |
RJK0632JPD
|
896Kb/6P
|
N-Channel 6 0-V (D-S) MOSFET
|
 Inchange Semiconductor ... |
RJK0632JPD
|
277Kb/2P
|
isc N-Channel MOSFET Transistor
|
 SHENZHEN DOINGTER SEMIC... |
RJK0632JPD
|
1Mb/5P
|
N-Channel MOSFET uses advanced trench technology
|
 Renesas Technology Corp |
RJK0632JPD-00
|
124Kb/7P
|
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK0632JPD-00-J3
|
124Kb/7P
|
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK0632JPD-00J3
|
124Kb/7P
|
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK0632JPD
|
102Kb/7P
|
60 V, 20 A Silicon N Channel MOS FET High Speed Power Switching
|
| Search Partnumber :
Start with "RJK0632JPD" -
Total : 21 ( 1/2 Page) |
 Renesas Technology Corp |
RJK0632JPD-00
|
124Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK0632JPD-00-J3
|
124Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK0632JPD-00J3
|
124Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK0632JPD
|
102Kb/7P |
60 V, 20 A Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK0630JPE
|
121Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
 Inchange Semiconductor ... |
RJK0630JPE
|
327Kb/2P |
isc N-Channel MOSFET Transistor
|
 Renesas Technology Corp |
RJK0630JPE
|
121Kb/7P |
Silicon N Channel MOS FET High Speed Power Switching
|
|
RJK0631JPD
|
87Kb/7P |
Silicon N Channel Power MOS FET High Speed Power Switching
|
 SHENZHEN DOINGTER SEMIC... |
RJK0631JPD
|
2Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Inchange Semiconductor ... |
RJK0631JPD
|
277Kb/2P |
isc N-Channel MOSFET Transistor
|
 Renesas Technology Corp |
RJK0631JPD-00-J0
|
87Kb/7P |
Silicon N Channel Power MOS FET High Speed Power Switching
|
|
RJK0631JPD
|
99Kb/7P |
Silicon N Channel Power MOS FET High Speed Power Switching
|