| Manufacturer | Part # | Datasheet | Description |
 Infineon Technologies A... |
PTF191601
|
61Kb/4P
|
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
2004-03-17
|
|
PTF191601E
|
61Kb/4P
|
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
2004-03-17
|
|
PTF191601E
|
206Kb/10P
|
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
2004-09-16
|
|
PTF191601F
|
206Kb/10P
|
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
2004-09-16
|
| Search Partnumber :
Start with "PTF191601" -
Total : 60 ( 1/3 Page) |
 Infineon Technologies A... |
PTF191601E
|
206Kb/10P |
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
2004-09-16 |
|
PTF191601E
|
61Kb/4P |
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
2004-03-17 |
|
PTF191601F
|
206Kb/10P |
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
2004-09-16 |
 Ericsson |
PTF10007
|
235Kb/6P |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
|
|
PTF10009
|
228Kb/6P |
85 Watts, 1.0 GHz GOLDMOS??Field Effect Transistor
|
|
PTF10015
|
221Kb/6P |
50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
|
 Advanced Semiconductor |
PTF10019
|
43Kb/1P |
MOS FIELD EFFECT TRANSISTOR
REV. A |
 Ericsson |
PTF10019
|
322Kb/6P |
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
|
PTF10020
|
313Kb/6P |
125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
|
PTF10021
|
278Kb/6P |
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor
|
|
PTF10031
|
215Kb/6P |
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
|
|
PTF10036
|
220Kb/6P |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
|
PTF10043
|
235Kb/6P |
12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor
|
|
PTF10045
|
207Kb/6P |
30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor
|
|
PTF10048
|
233Kb/6P |
30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor
|
|
PTF10052
|
498Kb/6P |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
|