| Manufacturer | Part # | Datasheet | Description |
 NXP Semiconductors |
PDTC123JT
|
66Kb/8P
|
NPN resistor-equipped transistor
1999 May 18
|
|
PDTC123JT
|
92Kb/14P
|
NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM
2004 Aug 13
|
|
PDTC123JT
|
948Kb/12P
|
Low VCEsat (BISS) transistors
May 2006
|
|
PDTC123JT
|
181Kb/14P
|
NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓
2004 Aug 13
|
 Nexperia B.V. All right... |
PDTC123JT
|
809Kb/12P
|
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
1 April 2023
|
|
PDTC123JT
|
1Mb/18P
|
PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 5 - 21 December 2011
|
 TECH PUBLIC Electronics... |
PDTC123JT
|
1Mb/4P
|
Digital Transistor
|
 Nexperia B.V. All right... |
PDTC123JT
|
859Kb/18P
|
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 7 - 21 December 2011
|
|
PDTC123JT-Q
|
228Kb/12P
|
50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ
7 March 2022
|
|
PDTC123JT-QR
|
859Kb/18P
|
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 7 - 21 December 2011
|
|
PDTC123JT-QVL
|
859Kb/18P
|
NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k
Rev. 7 - 21 December 2011
|