| Manufacturer | Part # | Datasheet | Description |
 NXP Semiconductors |
PDTB113Z
|
138Kb/10P
|
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓
Rev. 02-16 November 2009
|
|
PDTB113ZK
|
948Kb/12P
|
Low VCEsat (BISS) transistors
May 2006
|
|
PDTB113ZK
|
138Kb/10P
|
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓
Rev. 02-16 November 2009
|
 Nexperia B.V. All right... |
PDTB113ZQA
|
1Mb/22P
|
50 V, 500 mA NPN resistor-equipped transistors
Rev. 1 - 31 March 2016
|
|
PDTB113ZQA
|
1Mb/22P
|
50 V, 500 mA PNP resistor-equipped transistors
Rev. 1 - 6 January 2016
|
|
PDTB113ZQA
|
1Mb/22P
|
50 V, 500 mA PNP resistor-equipped transistors
Rev. 1 - 6 January 2016
|
|
PDTB113ZQA_SER
|
1Mb/22P
|
50 V, 500 mA PNP resistor-equipped transistors
Rev. 1 - 6 January 2016
|
 NXP Semiconductors |
PDTB113ZS
|
138Kb/10P
|
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓
Rev. 02-16 November 2009
|
|
PDTB113ZT
|
948Kb/12P
|
Low VCEsat (BISS) transistors
May 2006
|
|
PDTB113ZT
|
138Kb/10P
|
PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓
Rev. 02-16 November 2009
|
 Nexperia B.V. All right... |
PDTB113ZT
|
206Kb/8P
|
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
15 January 2021
|
|
PDTB113ZU
|
3Mb/27P
|
500 mA, 50 V PNP resistor-equipped transistors
|
|
PDTB113ZU
|
3Mb/27P
|
500 mA, 50 V NPN resistor-equipped transistors
Rev. 1 - 13 May 2014
|
|
PDTB113ZU
|
3Mb/27P
|
500 mA, 50 V PNP resistor-equipped transistors
Rev. 1 - 6 May 2014
|
|
PDTB113Z_SER
|
1Mb/22P
|
50 V, 500 mA PNP resistor-equipped transistors
Rev. 1 - 6 January 2016
|