| Manufacturer | Part # | Datasheet | Description |
 NXP Semiconductors |
PDTA123YS
|
123Kb/18P
|
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04-3 September 2009
|
 Nexperia B.V. All right... |
PDTA123YS
|
237Kb/19P
|
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009
|
| Search Partnumber :
Start with "PDTA123YS" -
Total : 46 ( 1/3 Page) |
 NXP Semiconductors |
PDTA123YE
|
123Kb/18P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04-3 September 2009 |
 Nexperia B.V. All right... |
PDTA123YE
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
 NXP Semiconductors |
PDTA123YK
|
123Kb/18P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04-3 September 2009 |
 Nexperia B.V. All right... |
PDTA123YK
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
 NXP Semiconductors |
PDTA123YM
|
123Kb/18P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04-3 September 2009 |
 Nexperia B.V. All right... |
PDTA123YM
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
|
PDTA123YMB
|
628Kb/12P |
PNP resistor-equipped transistor; R1 = 2.2 k廓, R2 = 10 k廓
|
 NXP Semiconductors |
PDTA123YT
|
948Kb/12P |
Low VCEsat (BISS) transistors
May 2006 |
|
PDTA123YT
|
123Kb/18P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04-3 September 2009 |
 Nexperia B.V. All right... |
PDTA123YT
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
 NXP Semiconductors |
PDTA123YU
|
948Kb/12P |
Low VCEsat (BISS) transistors
May 2006 |
|
PDTA123YU
|
123Kb/18P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04-3 September 2009 |
 Nexperia B.V. All right... |
PDTA123YU
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
|
PDTA123Y_SER
|
237Kb/19P |
PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
Rev. 04 - 3 September 2009 |
 NXP Semiconductors |
PDTA123E
|
102Kb/14P |
PNP resistor-equipped transistors
2004 Aug 02 |
|
PDTA123E
|
189Kb/14P |
PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
2004 Aug 02 |
 Nexperia B.V. All right... |
PDTA123E
|
421Kb/15P |
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2004 Aug 02 |
 NXP Semiconductors |
PDTA123EE
|
102Kb/14P |
PNP resistor-equipped transistors
2004 Aug 02 |