| Manufacturer | Part # | Datasheet | Description |
 Renesas Technology Corp |
NX8349TS
|
234Kb/11P
|
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 California Eastern Labs |
NX8349TS
|
333Kb/10P
|
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
 Renesas Technology Corp |
NX8349TS
|
246Kb/9P
|
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 California Eastern Labs |
NX8349TS
|
705Kb/9P
|
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
| Search Partnumber :
Start with "NX8349TS" -
Total : 29 ( 1/2 Page) |
 California Eastern Labs |
NX8349TB
|
633Kb/9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8349TB
|
242Kb/8P |
LASER DIODE 1 650 nm InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
 Renesas Technology Corp |
NX8349TB
|
211Kb/9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8349TB
|
204Kb/9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 California Eastern Labs |
NX8349TB
|
633Kb/9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 Renesas Technology Corp |
NX8349TS
|
246Kb/9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 California Eastern Labs |
NX8349TS
|
705Kb/9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8349XK
|
333Kb/10P |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
 Renesas Technology Corp |
NX8349XK
|
234Kb/11P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 California Eastern Labs |
NX8349YK
|
333Kb/10P |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
 Renesas Technology Corp |
NX8349YK
|
234Kb/11P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8349YK
|
253Kb/9P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
 California Eastern Labs |
NX8340MD-CC
|
280Kb/6P |
1310 nm AIGaInAs MQW-DFB LASER DIODE MODULE WITH DRIVER IN SMT PACKAGE FOR 10 GB/s APPLICATIONS
|
 Renesas Technology Corp |
NX8340MD-CC
|
247Kb/11P |
LASER DIODE
2004 |
 California Eastern Labs |
NX8341
|
351Kb/13P |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
|
NX8341
|
372Kb/15P |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|