| Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
NX6342EP
|
202Kb/7P
|
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
California Eastern Labs |
NX6342EP
|
899Kb/6P
|
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
|
NX6342EP-AZ
|
899Kb/6P
|
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Technology Corp |
NX6342EP
|
194Kb/7P
|
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
| Search Partnumber :
Start with "NX6342EP" -
Total : 90 ( 1/5 Page) |
California Eastern Labs |
NX6342EP-AZ
|
899Kb/6P |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Technology Corp |
NX6342EP
|
194Kb/7P |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
California Eastern Labs |
NX6301
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6301GH
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6301GI
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6301GJ
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6301GK
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6301SH
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6301SI
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6301SJ
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6301SK
|
96Kb/4P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
|
NX6306
|
388Kb/5P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
|
Renesas Technology Corp |
NX6306
|
272Kb/11P |
LASER DIODE
2004 |
California Eastern Labs |
NX63067H
|
401Kb/5P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
|
NX63067K
|
401Kb/5P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
|
NX6306GH
|
388Kb/5P |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
|
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