| Manufacturer | Part # | Datasheet | Description |
 NEC |
NE24200
|
85Kb/8P
|
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
|
NE24200
|
46Kb/4P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
|
 California Eastern Labs |
NE24200
|
47Kb/4P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
 NEC |
NE24200
|
46Kb/4P
|
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
|
| Search Partnumber :
Start with "NE24200" -
Total : 102 ( 1/6 Page) |
 NEC |
NE24200
|
46Kb/4P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
|
|
NE24283B
|
39Kb/4P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
|
 California Eastern Labs |
NE24283B
|
49Kb/4P |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
|
 Richco, Inc. |
NE20
|
39Kb/1P |
CABLE CLAMPS, PLASTISOL DIPPED
|
 Rohm |
NE2001-VA20
|
166Kb/5P |
Near edge thermal printhead (8 dots / mm)
|
|
NE2001-VA20A
|
166Kb/5P |
Near edge thermal printhead (8 dots / mm)
|
|
NE2002-VA10A
|
215Kb/5P |
Near edge thermal printhead (8 dots / mm)
|
|
NE2004-VA10A
|
213Kb/5P |
Near edge thin film thermal printhead (8 dots / mm)
|
 NEC |
NE202
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
 Renesas Technology Corp |
NE20200
|
570Kb/8P |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1988 |
 NEC |
NE20248
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
|
NE20283A
|
329Kb/9P |
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
 Renesas Technology Corp |
NE202930
|
217Kb/8P |
Silicon NPN Epitaxial High Frequency Transistor
|
 California Eastern Labs |
NE202930
|
571Kb/7P |
Silicon NPN Epitaxial High Frequency Transistor
|
 Renesas Technology Corp |
NE202930-T1
|
217Kb/8P |
Silicon NPN Epitaxial High Frequency Transistor
|
 California Eastern Labs |
NE202930-T1
|
571Kb/7P |
Silicon NPN Epitaxial High Frequency Transistor
|