| Manufacturer | Part # | Datasheet | Description |
 NEC |
NE202
|
329Kb/9P
|
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
 Renesas Technology Corp |
NE20200
|
570Kb/8P
|
HETERO JUNCTION FIELD EFFECT TRANSISTOR
1988
|
 NEC |
NE20248
|
329Kb/9P
|
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
|
NE20283A
|
329Kb/9P
|
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
 Renesas Technology Corp |
NE202930
|
217Kb/8P
|
Silicon NPN Epitaxial High Frequency Transistor
|
 California Eastern Labs |
NE202930
|
571Kb/7P
|
Silicon NPN Epitaxial High Frequency Transistor
|
 Renesas Technology Corp |
NE202930-T1
|
217Kb/8P
|
Silicon NPN Epitaxial High Frequency Transistor
|
 California Eastern Labs |
NE202930-T1
|
571Kb/7P
|
Silicon NPN Epitaxial High Frequency Transistor
|
|
NE202930-T1-A
|
571Kb/7P
|
Silicon NPN Epitaxial High Frequency Transistor
|
 Renesas Technology Corp |
NE202930
|
228Kb/8P
|
Silicon NPN Epitaxial High Frequency Transistor
|
 NEC |
NE202XX
|
329Kb/9P
|
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|
|
NE202XX-1.4
|
329Kb/9P
|
ULTRA LOW NOISE K BAND HETERO JUNCTION FET
|