| Manufacturer | Part # | Datasheet | Description |
 International Rectifier |
IRG4BC20F
|
161Kb/8P
|
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
|
IRG4BC20F
|
98Kb/35P
|
Fit Rate / Equivalent Device Hours
|
|
IRG4BC20FD
|
222Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
|
IRG4BC20FD
|
98Kb/35P
|
Fit Rate / Equivalent Device Hours
|
|
IRG4BC20FD-S
|
222Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
|
IRG4BC20FD-SPBF
|
298Kb/12P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT
|
|
IRG4BC20FD-STRL
|
222Kb/10P
|
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
|
IRG4BC20FDPBF
|
318Kb/11P
|
INSULATED GATEBIPOLAR TRANSISTOR WITH ULTRAFAST SOFR RECOVERY DIODE
|
|
IRG4BC20FDPBF
|
319Kb/11P
|
OPTIMIZED FOR MEDIUM OPERATING
|
|
IRG4BC20FDPBF
|
319Kb/11P
|
OPTIMIZED FOR MEDIUM OPERATING
|
|
IRG4BC20FPBF
|
204Kb/9P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC20FPBF
|
204Kb/9P
|
INSULATED GATE BIPOLAR TRANSISTOR
|
|
IRG4BC20FPBF
|
204Kb/9P
|
INSULATED GATE BIPOLAR TRANSISTOR
|