IRFZ48N Datasheet, PDF - Alldatasheet

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IRFZ48N Datasheet, PDF

Search Partnumber : Match&Start with "IRFZ48N" - Total : 22 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	IRFZ48N	65Kb/8P	N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1.000
International Rectifier	IRFZ48N	102Kb/8P	HEXFET Power MOSFET
Inchange Semiconductor ...	IRFZ48N	121Kb/2P	isc N-Channel MOSFET Transistor
Kersemi Electronic Co.,...	IRFZ48N	856Kb/2P	Fast Switching
EVER SEMICONDUCTOR CO.,...	IRFZ48N	443Kb/4P	N-Ch 60V Fast Switching MOSFETs Rev:2023A2
SYC Electronica	IRFZ48N	151Kb/8P	Advanced Process Technology
List of Unclassifed Man...	IRFZ48N	2Mb/31P	SEMICONDUCTORS
International Rectifier	IRFZ48NL	134Kb/10P	Advanced Process Technology
	IRFZ48NLPBF	297Kb/10P	HEXFET Power MOSFET
	IRFZ48NPBF	181Kb/8P	HEXFET Power MOSFET
	IRFZ48NPBF	232Kb/8P	ADVANCED PROCESS TECHNOLOGY
VBsemi Electronics Co.,...	IRFZ48NPBF	1Mb/9P	N-Channel 60 V (D-S) MOSFET
International Rectifier	IRFZ48NPBF	232Kb/8P	ADVANCED PROCESS TECHNOLOGY
International Rectifier	IRFZ48NS	134Kb/10P	Advanced Process Technology
Kersemi Electronic Co.,...	IRFZ48NS	1Mb/10P	Advanced Process Technology
Inchange Semiconductor ...	IRFZ48NS	263Kb/2P	isc N-Channel MOSFET Transistor
International Rectifier	IRFZ48NSPBF	297Kb/10P	HEXFET Power MOSFET
International Rectifier	IRFZ48NSPBF	306Kb/11P	ADVANCED PROCESS TECHNOLOGY
VBsemi Electronics Co.,...	IRFZ48NSPBF	1Mb/8P	N-Channel 60-V (D-S) MOSFET
International Rectifier	IRFZ48NSPBF	306Kb/11P	ADVANCED PROCESS TECHNOLOGY

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IRFZ48N Datasheet, PDF [Distributor]

Distributor	Part #	Manufacturer Datasheet	Description	Buy Now
Element14	IRFZ48NSPBF	INFINEON	MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Volt...
	IRFZ48NSTRLPBF	INFINEON	MOSFET, N-CH, 55V, 64A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Dr...

IRFZ48N Distributor

Distributor	Part #	Manufacturer	Description	Price	Qty. BuyNow

Brief Description of IRFZ48N

The IRFZ48N is a type of power MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. MOSFETs like the IRFZ48N are commonly used in electronic devices for switching and amplifying signals. Here are the detailed explanations of the specifications and features of the IRFZ48N:

Advanced Process Technology: This refers to the manufacturing process used to create the MOSFET, which affects its performance, power efficiency, and reliability.

Ultra Low On-Resistance (Rds(on)): On-resistance is the resistance between the drain and source of the MOSFET when it is turned on. A lower value means less power loss and better efficiency when the MOSFET is conducting.

Dynamic dv/dt Rating: This parameter indicates the MOSFET's ability to handle high voltage changes over time without failing. It's crucial for applications that involve fast switching.

175°C Operating Temperature: The IRFZ48N can operate at temperatures up to 175°C, which is higher than what many other MOSFETs can withstand. This makes it suitable for high-temperature environments.

Fast Switching: This feature is essential for power supply applications where the MOSFET needs to turn on and off rapidly to regulate the output voltage efficiently.

Fully Avalanche Rated: Being avalanche rated means that the MOSFET can handle brief overvoltage conditions beyond its normal operating conditions without being damaged.

TO-220 Package: This is the physical packaging and form factor of the MOSFET. The TO-220 package is widely used for its good heat dissipation and ability to handle higher currents.

The IRFZ48N is produced by various manufacturers and is used in a wide range of applications, from power supplies to motor controllers. Its ability to switch large currents and voltages efficiently and its robustness in different environments make it a popular choice for power electronics.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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