IRF1407 Datasheet, PDF - Alldatasheet

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IRF1407 Datasheet, PDF

Search Partnumber : Match&Start with "IRF1407" - Total : 17 ( 1/1 Page)

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRF1407	127Kb/9P	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A??
Inchange Semiconductor ...	IRF1407	338Kb/2P	N-Channel MOSFET Transistor
International Rectifier	IRF1407	271Kb/9P	Advanced Process Technology
International Rectifier	IRF1407L	159Kb/11P	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??
Inchange Semiconductor ...	IRF1407L	331Kb/2P	isc N-Channel MOSFET Transistor
Infineon Technologies A...	IRF1407LPbF	578Kb/12P	HEXFET짰 Power MOSFET 2016-5-26
International Rectifier	IRF1407LPBF	258Kb/12P	HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )
	IRF1407PBF	167Kb/10P	HEXFET짰 Power MOSFET
	IRF1407PBF	271Kb/9P	Advanced Process Technology
	IRF1407PBF	271Kb/9P	Advanced Process Technology
	IRF1407S	159Kb/11P	Power MOSFET(Vdss = 75V, Rds(on) = 0.0078?? Id = 100A??
Inchange Semiconductor ...	IRF1407S	189Kb/2P	Isc N-Channel MOSFET Transistor
Infineon Technologies A...	IRF1407SPBF	578Kb/12P	HEXFET짰 Power MOSFET 2016-5-26
International Rectifier	IRF1407SPBF	258Kb/12P	HEXFET짰 Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078廓 , ID = 100A )
	IRF1407SPBF	259Kb/12P	Advanced Process Technology
	IRF1407SPBF	259Kb/12P	Advanced Process Technology
Infineon Technologies A...	IRF1407STRLPbF	578Kb/12P	HEXFET짰 Power MOSFET 2016-5-26

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IRF1407 Datasheet, PDF [Distributor]

Distributor	Part #	Manufacturer Datasheet	Description	Buy Now
Element14	IRF1404ZSPBF	INFINEON	MOSFET, N, 40V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source...
	IRF1405ZPBF..	INFINEON	MOSFET, N, 55V, 150A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain...

IRF1407 Distributor

Distributor	Part #	Manufacturer	Description	Price	Qty. BuyNow

Brief Description of IRF1407

The IRF1407 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance and high-power applications. It is produced by various semiconductor manufacturers, including Infineon Technologies, ON Semiconductor, and others. Here are some key features and specifications of the IRF1407:

MOSFET Type: The IRF1407 is an N-channel enhancement-mode MOSFET. In an enhancement-mode MOSFET, the device conducts when a voltage is applied to the gate terminal, unlike depletion-mode MOSFETs, which conduct by default until a voltage is applied to the gate to turn them off.

Voltage and Current Ratings: The IRF1407 typically operates with a drain-source voltage (VDS) rating of around 75 volts and a continuous drain current (ID) rating of several tens of amperes, making it suitable for high-power applications.

Low On-Resistance: The IRF1407 features low on-resistance (RDS(on)), which results in reduced conduction losses when the MOSFET is fully turned on. This characteristic is essential for efficient power conversion and switching applications.

High-Speed Switching: With its low gate charge and intrinsic capacitances, the IRF1407 is capable of high-speed switching, making it suitable for applications requiring fast switching frequencies, such as power supplies, motor drives, and inverters.

TO-220 Package: The IRF1407 is commonly available in a TO-220 package, which provides good thermal performance and ease of mounting on a heatsink for heat dissipation in high-power applications.

Application: The IRF1407 is commonly used in various electronic circuits and applications, including switching regulators, DC-DC converters, motor control circuits, power amplifiers, and electronic relays.

Gate-Source Threshold Voltage (VGS(th)): The gate-source threshold voltage specifies the minimum voltage required between the gate and source terminals to turn the MOSFET on. This parameter varies among individual devices and should be considered in circuit design.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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