| Manufacturer | Part # | Datasheet | Description |
 Samsung semiconductor |
IRF131
|
211Kb/5P
|
N-CHANNEL POWER MOSFETS
|
 Fairchild Semiconductor |
IRF131
|
180Kb/6P
|
N-Channel Power MOSFETs, 20 A, 60-100 V
|
 Inchange Semiconductor ... |
IRF131
|
198Kb/2P
|
N-Channel MOSFET Transistor
|
 International Rectifier |
IRF1310N
|
96Kb/8P
|
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
 Inchange Semiconductor ... |
IRF1310N
|
338Kb/2P
|
N-Channel MOSFET Transistor
|
 International Rectifier |
IRF1310NL
|
156Kb/10P
|
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
 Kersemi Electronic Co.,... |
IRF1310NL
|
1Mb/10P
|
Advanced Process Technology
|
 Inchange Semiconductor ... |
IRF1310NL
|
300Kb/2P
|
Isc N-Channel MOSFET Transistor
|
 International Rectifier |
IRF1310NLPBF
|
725Kb/11P
|
HEXFET Power MOSFET
|
|
IRF1310NPBF
|
592Kb/8P
|
HEXFET POWER MOSFET
|
|
IRF1310NPBF
|
599Kb/9P
|
ADVANCED PROCESS TECHNOLOGY
|
|
IRF1310NPBF
|
599Kb/9P
|
ADVANCED PROCESS TECHNOLOGY
|
|
IRF1310NS
|
156Kb/10P
|
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)
|
 Kersemi Electronic Co.,... |
IRF1310NS
|
1Mb/10P
|
Fully Avalanche Rated
|
 Inchange Semiconductor ... |
IRF1310NS
|
189Kb/2P
|
Isc N-Channel MOSFET Transistor
|
 International Rectifier |
IRF1310NSPBF
|
725Kb/11P
|
HEXFET Power MOSFET
|
|
IRF1310NSPBF
|
726Kb/11P
|
ADVANCED PROCESS TECHNOLOGY
|
|
IRF1310NSPBF
|
726Kb/11P
|
ADVANCED PROCESS TECHNOLOGY
|
|
IRF1310NSTRLPBF
|
726Kb/11P
|
Advanced Process Technology
|
|
IRF1310S
|
361Kb/8P
|
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
|