| Manufacturer | Part # | Datasheet | Description |
 Infineon Technologies A... |
IPT210N25NFD
|
1,005Kb/10P
|
OptiMOS짧3 Power-Transistor, 250 V
Rev.2.0,2016-01-11
|
 Inchange Semiconductor ... |
IPT210N25NFD
|
367Kb/3P
|
N-Channel MOSFET Transistor
|
| Search Partnumber :
Start with "IPT210N25NFD" -
Total : 47 ( 1/3 Page) |
 IP SEMICONDUCTOR CO., L... |
IPT2006-BEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-BEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-CEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-CEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-DEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2006-DEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-BEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-BEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-CEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-CEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-DEA
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT2008-DEB
|
209Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-CEA
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-CEB
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-SEA
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-SEB
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-TEA
|
208Kb/4P |
High current density due to double mesa technology
|
|
IPT20Q06-TEB
|
208Kb/4P |
High current density due to double mesa technology
|