| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
HN1D02F
|
119Kb/2P
|
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
|
HN1D02F
|
192Kb/3P
|
Ultra-High-Speed Switching Applications
|
|
HN1D02FE
|
212Kb/4P
|
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
|
HN1D02FE
|
237Kb/4P
|
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
HN1D02FU
|
129Kb/2P
|
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
|
HN1D02FU
|
359Kb/3P
|
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
|
HN1D02FU
|
359Kb/3P
|
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
|
HN1D02FU
|
246Kb/3P
|
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
HN1D02F
|
192Kb/3P
|
Ultra-High-Speed Switching Applications
|
|
HN1D02F
|
204Kb/3P
|
TOSHIBA Diode Silicon Epitaxial Planar Type
|