| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
HN1D01F
|
125Kb/2P
|
DIODE (ULTRAL HIGH SPEED SWITCHING APPLICATIONS)
|
|
HN1D01F
|
231Kb/4P
|
Silicon Epitaxial Planar Type Ultra-High-Speed Switching Applications
|
|
HN1D01FE
|
298Kb/4P
|
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
|
HN1D01FE
|
248Kb/4P
|
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
HN1D01FU
|
129Kb/2P
|
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
|
HN1D01FU
|
335Kb/4P
|
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
|
HN1D01FU
|
335Kb/4P
|
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
|
HN1D01FU
|
247Kb/4P
|
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
HN1D01F
|
231Kb/4P
|
Silicon Epitaxial Planar Type Ultra-High-Speed Switching Applications
|
|
HN1D01F
|
219Kb/4P
|
TOSHIBA Diode Silicon Epitaxial Planar Type
|