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Manufacturer Part # Datasheet Description Toshiba Semiconductor GT50G321 287Kb/6P TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Search Partnumber : Start with "GT50G321" - Total : 32 ( 1/2 Page) Toshiba Semiconductor GT50G101 835Kb/16P Discrete IGBTs GT50G102 835Kb/16P Discrete IGBTs Goford Semiconductor GT500P10K 634Kb/6P P-Channel Enhancement Mode Power MOSFET Toshiba Semiconductor GT50J101 835Kb/16P Discrete IGBTs GT50J102 254Kb/5P N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) GT50J102 1Mb/73P Bipolar Small-Signal Transistors GT50J102 439Kb/6P HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2006-11-01 GT50J102 439Kb/6P HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2006-11-01 GT50J121 317Kb/6P TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 190Kb/6P Silicon N Channel IGBT High Power Switching Applications GT50J121 1Mb/73P Bipolar Small-Signal Transistors GT50J121 190Kb/6P Silicon N Channel IGBT High Power Switching Applications GT50J122 160Kb/6P Current Resonance Inverter Switching Application GT50J123 220Kb/10P Discrete IGBTs Silicon N-Channel IGBT GT50J301 282Kb/5P N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) GT50J301 1Mb/73P Bipolar Small-Signal Transistors GT50J322 254Kb/5P N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) GT50J322 614Kb/6P SILICON N CHANNEL IGBT FOURTH GENERATION IGBT GT50J322 1Mb/73P Bipolar Small-Signal Transistors

GT50G321 Datasheet, PDF [Distributor]

Distributor Part # Manufacturer Datasheet Description Buy Now Element14 GT50J102 TOSHIBA IGBT, 600V, TO-3P(LH); DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.7V; ... GT50J325 TOSHIBA IGBT, 600V, TO-3P(LH); DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):2.45V;...

GT50G321 Distributor