| Manufacturer | Part # | Datasheet | Description |
 Murata Manufacturing Co... |
DFE201610C
|
171Kb/1P
|
The use of Flat wire for Low DC resistance
|
 Texas Instruments |
DFE201610C
|
3Mb/63P
|
TPS6128xD/E Low-IQ, Wide-Voltage Battery Front-End DC/DC Converter for Single-Cell Li-Ion, Ni-Rich, Si-Anode Applications
REVISED JUNE 2023
|
 TOKO, Inc |
DFE201610C
|
79Kb/1P
|
Metal Alloy Inductors
|
|
DFE201610C
|
216Kb/1P
|
Metal Alloy Inductors
|
| Search Partnumber :
Start with "DFE201610C" -
Total : 68 ( 1/4 Page) |
 TOKO, Inc |
DFE201610C
|
216Kb/1P |
Metal Alloy Inductors
|
|
DFE201610E
|
233Kb/1P |
The use of Flat wire for Low DC resistance
|
|
DFE201610E-100M
|
233Kb/1P |
The use of Flat wire for Low DC resistance
|
|
DFE201610E-100M
|
228Kb/1P |
Metal Alloy Inductors
|
 Murata Manufacturing Co... |
DFE201610E-100M
|
982Kb/2P |
Inductor
|
|
DFE201610E-100M
|
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
|
DFE201610E-100M#
|
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
|
DFE201610E-100M
|
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
 TOKO, Inc |
DFE201610E-1R0M
|
233Kb/1P |
The use of Flat wire for Low DC resistance
|
|
DFE201610E-1R0M
|
228Kb/1P |
Metal Alloy Inductors
|
 Murata Manufacturing Co... |
DFE201610E-1R0M
|
982Kb/2P |
Inductor
|
|
DFE201610E-1R0M
|
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
|
DFE201610E-1R0M#
|
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
|
DFE201610E-1R0M
|
2Mb/2P |
Rated current (Isat) is specified when the decrease of the initial inductance value at 30%
|
 TOKO, Inc |
DFE201610E-1R5M
|
233Kb/1P |
The use of Flat wire for Low DC resistance
|
|
DFE201610E-1R5M
|
228Kb/1P |
Metal Alloy Inductors
|