| Manufacturer | Part # | Datasheet | Description |
 Infineon Technologies A... |
BCR10PN
|
51Kb/5P
|
NPN/PNP Silicon Digital Transistor Array
Nov-29-2001
|
|
BCR10PN
|
141Kb/7P
|
NPN/PNP Silicon Digital Transistor Array
2007-07-24
|
 Siemens Semiconductor G... |
BCR10PN
|
62Kb/5P
|
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
|
 Infineon Technologies A... |
BCR10PN-H6327
|
533Kb/7P
|
NPN/PNP Silicon Digital Transistor Array
2011-09-22
|
|
BCR10PN
|
141Kb/7P
|
NPN/PNP Silicon Digital Transistor Array
2007-07-24
|
| Search Partnumber :
Start with "BCR10PN" -
Total : 21 ( 1/2 Page) |
 Mitsubishi Electric Sem... |
BCR10PM
|
93Kb/5P |
MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
 Powerex Power Semicondu... |
BCR10PM
|
82Kb/6P |
Isolated Triac 10 Amperes/400-600 Volts
|
 Renesas Technology Corp |
BCR10PM
|
193Kb/12P |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
 Powerex Power Semicondu... |
BCR10PM-12
|
82Kb/6P |
Isolated Triac 10 Amperes/400-600 Volts
|
|
BCR10PM-12L
|
82Kb/6P |
Isolated Triac 10 Amperes/400-600 Volts
|
 Renesas Technology Corp |
BCR10PM-12LA
|
103Kb/8P |
Triac
|
|
BCR10PM-12LA-A8
|
103Kb/8P |
Triac
|
|
BCR10PM-12LB
|
111Kb/8P |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150瑗낧)
|
|
BCR10PM-12LD
|
127Kb/8P |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)
|
|
BCR10PM-12LD-A8
|
127Kb/8P |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)
|
|
BCR10PM-12LD
|
103Kb/8P |
Triac Medium Power Use
|
|
BCR10PM-12LG
|
121Kb/8P |
Triac Medium Power Use
|
|
BCR10PM-12LG
|
132Kb/8P |
Triac Medium Power Use
|
|
BCR10PM-12LG-A8
|
121Kb/8P |
Triac Medium Power Use
|
|
BCR10PM-12LG-A8
|
132Kb/8P |
Triac Medium Power Use
|