BC549 Datasheet, PDF - Alldatasheet

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BC549 Datasheet, PDF

Search Partnumber : Match&Start with "BC549" - Total : 61 ( 1/4 Page)

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	BC549	44Kb/8P	NPN general purpose transistors 1999 Apr 22
Semtech Corporation	BC549	371Kb/5P	NPN Silicon Epitaxial Planar Transistor
ON Semiconductor	BC549	301Kb/8P	NPN Epitaxial Silicon Transistor November 2014 Rev. 1.1.1
NXP Semiconductors	BC549	248Kb/7P	NPN general purpose transistors 2004 Oct 11
General Semiconductor	BC549	263Kb/6P	Small Signal Transistors (NPN)
SEMTECH ELECTRONICS LTD...	BC549	139Kb/2P	NPN Silicon Epitaxial Planar Transistor
Micro Electronics	BC549	315Kb/4P	NPN SILICON RF SMALL SIGNAL TRANSISTOR
Diotec Semiconductor	BC549	148Kb/2P	Si-Epitaxial PlanarTransistors
Siemens Semiconductor G...	BC549	210Kb/6P	NPN Silicon Transistors
Diotec Semiconductor	BC549	100Kb/2P	General Purpose Si-Epitaxial Planar Transistors
Dc Components	BC549	215Kb/1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
KEC(Korea Electronics)	BC549	121Kb/1P	EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)
Fairchild Semiconductor	BC549	44Kb/4P	NPN EPITAXIAL SILICON TRANSISTOR
KEC(Korea Electronics)	BC549	34Kb/1P	EPITAXIAL PLANAR NPN TRANSISTOR
Fairchild Semiconductor	BC549	50Kb/4P	Switching and Applications Switching and Applications
	BC549	55Kb/4P	Switching and Applications
	BC549	50Kb/4P	Switching and Applications
	BC549	50Kb/4P	Switching and Applications
	BC549	151Kb/6P	Switching and Amplifier
	BC549	141Kb/6P	NPN Epitaxial Silicon Transistor

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BC549 Datasheet, PDF [Distributor]

Distributor	Part #	Manufacturer Datasheet	Description	Buy Now
Element14	BC549	ONSEMI	TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition ...
	BC549B	ONSEMI	TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition ...

BC549 Distributor

Distributor	Part #	Manufacturer	Description	Price	Qty. BuyNow

Brief Description of BC549

The BC549 is a general-purpose NPN bipolar junction transistor (BJT) commonly used for amplification and switching purposes. Here are its key features and specifications:

Type: NPN Bipolar Junction Transistor (BJT).

Polarity: NPN transistor, meaning it has a negative-positive-negative configuration.

Maximum Collector-Base Voltage (VCBO): Typically around 30 volts.

Maximum Collector-Emitter Voltage (VCEO): Generally around 30 volts.

Maximum Emitter-Base Voltage (VEBO): Typically around 5 volts.

Maximum Collector Current (IC): Usually in the range of a few hundred milliamperes.

Power Dissipation (Ptot): The maximum power the transistor can handle without damage, typically in the range of a few hundred milliwatts to a watt.

Transition Frequency (fT): The maximum frequency at which the transistor can effectively amplify signals, typically in the range of a few hundred megahertz.

Package: The BC549 transistor is commonly available in TO-92 or similar packages, which are suitable for through-hole PCB mounting.

Applications: Due to its general-purpose characteristics, the BC549 can be used in a wide range of applications, including small-signal amplification, voltage amplification, switching circuits, and oscillator circuits.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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