| Manufacturer | Part # | Datasheet | Description |
 ATMEL Corporation |
ATC13
|
143Kb/12P
|
Cell-based ASIC
|
| Search Partnumber :
Start with "ATC13" -
Total : 100 ( 1/5 Page) |
 ABB |
ATC100
|
279Kb/12P |
Switching - Loadbreak Switches IP65 Polycarbonate Enclosure
3/12 |
 List of Unclassifed Man... |
ATC100A
|
275Kb/6P |
Ultra-Stable Performance
|
 RF Micro Devices |
ATC100A0R2BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
|
ATC100A0R2BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 NXP Semiconductors |
ATC100A0R5BT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |
 RF Micro Devices |
ATC100A0R7BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
|
ATC100A0R7BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 NXP Semiconductors |
ATC100A100JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 List of Unclassifed Man... |
ATC100A100JW150XI
|
275Kb/6P |
Ultra-Stable Performance
|
|
ATC100A100JW150XT
|
275Kb/6P |
Ultra-Stable Performance
|
|
ATC100A100JW150XTV
|
275Kb/6P |
Ultra-Stable Performance
|
 NXP Semiconductors |
ATC100A101JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 RF Micro Devices |
ATC100A120JT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
|
ATC100A150JT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 NXP Semiconductors |
ATC100A220GT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |
 RF Micro Devices |
ATC100A220JT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
|
ATC100A220JT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 Freescale Semiconductor... |
ATC100A220JT150XT
|
985Kb/21P |
RF Power LDMOS Transistors
|
 NXP Semiconductors |
ATC100A3R3BT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |