| Manufacturer | Part # | Datasheet | Description |
 List of Unclassifed Man... |
ATC100E
|
250Kb/6P
|
High RF Current/Voltage
|
|
ATC100E391KW3600XC
|
250Kb/6P
|
High RF Current/Voltage
|
|
ATC100E391KW3600XI
|
250Kb/6P
|
High RF Current/Voltage
|
|
ATC100E391KW3600XT
|
250Kb/6P
|
High RF Current/Voltage
|
| Search Partnumber :
Start with "ATC100E" -
Total : 100 ( 1/5 Page) |
 List of Unclassifed Man... |
ATC100A
|
275Kb/6P |
Ultra-Stable Performance
|
 RF Micro Devices |
ATC100A0R2BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
|
ATC100A0R2BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 NXP Semiconductors |
ATC100A0R5BT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |
 RF Micro Devices |
ATC100A0R7BT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
|
ATC100A0R7BT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 NXP Semiconductors |
ATC100A100JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 List of Unclassifed Man... |
ATC100A100JW150XI
|
275Kb/6P |
Ultra-Stable Performance
|
|
ATC100A100JW150XT
|
275Kb/6P |
Ultra-Stable Performance
|
|
ATC100A100JW150XTV
|
275Kb/6P |
Ultra-Stable Performance
|
 NXP Semiconductors |
ATC100A101JP150XT
|
1Mb/25P |
Gallium Arsenide pHEMT RF Power Field Effect Transistor
Rev. 4, 8/2013 |
 RF Micro Devices |
ATC100A120JT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
|
ATC100A150JT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|
 NXP Semiconductors |
ATC100A220GT500XT
|
1Mb/17P |
RF LDMOS Wideband Integrated Power Amplifier
Rev. 1, 3/2011 |
 RF Micro Devices |
ATC100A220JT
|
923Kb/11P |
280W GaN WIDEBAND PULSED POWER
|
|
ATC100A220JT
|
773Kb/11P |
380W GaN WIDEBAND PULSED
|