| Manufacturer | Part # | Datasheet | Description |
 Microsemi Corporation |
APT102GA60B2
|
232Kb/6P
|
High Speed PT IGBT
|
|
APT102GA60B2
|
2Mb/44P
|
Power Semiconductors Power Modules
|
|
APT102GA60B2
|
2Mb/44P
|
Power Semiconductors Power Modules RF Power MOSFETs
|
| Search Partnumber :
Start with "APT102GA60B2" -
Total : 101 ( 1/6 Page) |
 Microsemi Corporation |
APT102GA60L
|
232Kb/6P |
High Speed PT IGBT
|
 Inchange Semiconductor ... |
APT100-101DN
|
326Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001
|
35Kb/2P |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001
|
50Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
 Inchange Semiconductor ... |
APT1001R1AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001R1AVR
|
68Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
|
APT1001R1BN
|
52Kb/4P |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
 Inchange Semiconductor ... |
APT1001R1BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1BNR
|
371Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001R1BVFR
|
70Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
 Inchange Semiconductor ... |
APT1001R1DN
|
326Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1GN
|
331Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R1HN
|
297Kb/2P |
isc N-Channel MOSFET Transistor
|
 Advanced Power Technolo... |
APT1001R1HVR
|
66Kb/4P |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
 Inchange Semiconductor ... |
APT1001R2AN
|
309Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R2BN
|
359Kb/2P |
isc N-Channel MOSFET Transistor
|
|
APT1001R2HN
|
360Kb/2P |
isc N-Channel MOSFET Transistor
|