| Manufacturer | Part # | Datasheet | Description |
NEC |
2SJ302
|
440Kb/8P
|
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
Renesas Technology Corp |
2SJ302
|
656Kb/10P
|
MOS FIELD EFFECT POWER TRANSISTOR
1993
|
VBsemi Electronics Co.,... |
2SJ302
|
954Kb/7P
|
P-Channel 60-V (D-S) MOSFET
|
Guangdong Kexin Industr... |
2SJ302
|
47Kb/1P
|
Mos Field Effect Power Transistor
|
|
2SJ302-ZJ
|
1Mb/5P
|
P-Channel MOSFET
|
|
2SJ3021-3
|
154Kb/4P
|
P-Channel Enhancement MOSFET
|
| Search Partnumber :
Start with "2SJ302" -
Total : 100 ( 1/5 Page) |
Guangdong Kexin Industr... |
2SJ3001
|
816Kb/6P |
P-Channel MOSFET
|
|
2SJ3001DS
|
151Kb/5P |
P-Channel Enhancement MOSFET
|
|
2SJ302-ZJ
|
1Mb/5P |
P-Channel MOSFET
|
|
2SJ3021-3
|
154Kb/4P |
P-Channel Enhancement MOSFET
|
NEC |
2SJ303
|
435Kb/8P |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
Renesas Technology Corp |
2SJ303
|
651Kb/10P |
MOS FIELD EFFECT POWER TRANSISTOR
1993 |
Inchange Semiconductor ... |
2SJ303
|
296Kb/2P |
isc P-Channel MOSFET Transistor
|
Guangdong Kexin Industr... |
2SJ3031DS-3
|
239Kb/4P |
P-Channel Enhancement MOSFET
|
Toshiba Semiconductor |
2SJ304
|
280Kb/5P |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
|
2SJ304
|
695Kb/6P |
DC−DC Converter, Relay Drive and Motor Drive Applications
|
|
2SJ304
|
393Kb/6P |
DC−DC Converter, Relay Drive and Motor Drive Applications
|
|
2SJ304
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
Inchange Semiconductor ... |
2SJ304
|
296Kb/2P |
isc P-Channel MOSFET Transistor
|
Guangdong Kexin Industr... |
2SJ3047DS-3
|
193Kb/4P |
P-Channel Enhancement MOSFET
|
English ▼ 
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
