| Manufacturer | Part # | Datasheet | Description |
 Sanyo Semicon Device |
2SJ265
|
84Kb/3P
|
Very High-Speed Switching Applications
|
 VBsemi Electronics Co.,... |
2SJ265
|
933Kb/7P
|
P-Channel 60 V (D-S) MOSFET
|
 Inchange Semiconductor ... |
2SJ265
|
297Kb/2P
|
isc P-Channel MOSFET Transistor
|
| Search Partnumber :
Start with "2SJ265" -
Total : 100 ( 1/5 Page) |
 Sanyo Semicon Device |
2SJ263
|
81Kb/3P |
Very High-Speed Switching Applications
|
 Inchange Semiconductor ... |
2SJ263
|
295Kb/2P |
isc P-Channel MOSFET Transistor
|
 Sanyo Semicon Device |
2SJ264
|
80Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ266
|
87Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ267
|
82Kb/3P |
Very High-Speed Switching Applications
|
|
2SJ268
|
90Kb/3P |
Very High-Speed Switching Applications
|
 Toshiba Semiconductor |
2SJ200
|
181Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ200
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
 Inchange Semiconductor ... |
2SJ200
|
313Kb/2P |
isc P-Channel MOSFET Transistor
|
 Toshiba Semiconductor |
2SJ200-Y
|
297Kb/5P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
|
2SJ200
|
426Kb/5P |
High Power Amplifier Application
|
|
2SJ201
|
182Kb/3P |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
|
2SJ201
|
448Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
275Kb/5P |
High-Power Amplifier Application
|
|
2SJ201
|
269Kb/5P |
High-Power Amplifier Application
|