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2SC5200 Datasheet, PDF

Search Partnumber : Match&Start with "2SC5200" - Total : 50 ( 1/3 Page)
ManufacturerPart #DatasheetDescription
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ON Semiconductor
2SC5200 ONSEMI-2SC5200 Datasheet
238Kb/7P
NPN Epitaxial Silicon Transistor
January 2009 Rev. C
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STMicroelectronics
2SC5200 STMICROELECTRONICS-2SC5200 Datasheet
157Kb/8P
High power NPN epitaxial planar bipolar transistor
28-Sep-2009
logo
Savantic, Inc.
2SC5200 SAVANTIC-2SC5200 Datasheet
229Kb/4P
Silicon NPN Power Transistors
logo
Toshiba Semiconductor
2SC5200 TOSHIBA-2SC5200 Datasheet
127Kb/4P
Power Amplifier Applications
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New Jersey Semi-Conduct...
2SC5200 NJSEMI-2SC5200 Datasheet
281Kb/2P
POWER AMPLIFIER APPLICATION
logo
Thinki Semiconductor Co...
2SC5200 THINKISEMI-2SC5200 Datasheet
424Kb/2P
150 Watt Silicon NPN Power Transistors
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Fairchild Semiconductor
2SC5200 FAIRCHILD-2SC5200 Datasheet
205Kb/6P
NPN Epitaxial Silicon Transistor
logo
Savantic, Inc.
2SC5200 SAVANTIC-2SC5200 Datasheet
231Kb/4P
Silicon NPN Power Transistors
logo
SYC Electronica
2SC5200 SYC-2SC5200 Datasheet
182Kb/7P
High power NPN epitaxial planar bipolar transistor
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Inchange Semiconductor ...
2SC5200 ISC-2SC5200 Datasheet
288Kb/2P
isc Silicon NPN Power Transistor
2023-9-20
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JILIN SINO-MICROELECTRO...
2SC5200 JSMC-2SC5200 Datasheet
571Kb/8P
Silicon NPN Triple Diffused Transistor
logo
Thinki Semiconductor Co...
2SC5200 THINKISEMI-2SC5200 Datasheet
281Kb/2P
150 Watt Silicon Epitaxial Planar NPN Power Transistor
logo
Unisonic Technologies
2SC5200 UTC-2SC5200 Datasheet
94Kb/3P
POWER AMPLIFIER APPLICATIONS
logo
Toshiba Semiconductor
2SC5200 TOSHIBA-2SC5200 Datasheet
1Mb/73P
Bipolar Small-Signal Transistors
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Unisonic Technologies
2SC5200 UTC-2SC5200 Datasheet
177Kb/4P
POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER
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Jiangsu Changjiang Elec...
2SC5200 JIANGSU-2SC5200 Datasheet
377Kb/2P
TO-3P Plastic-Encapsulate Transistors
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Foshan Blue Rocket Elec...
2SC5200 FOSHAN-2SC5200 Datasheet
921Kb/6P
Silicon NPN transistor in a TO-3P Plastic Package.
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JILIN SINO-MICROELECTRO...
2SC5200-O-AB-N-B JSMC-2SC5200-O-AB-N-B Datasheet
571Kb/8P
Silicon NPN Triple Diffused Transistor
2SC5200-O-AL-N-B JSMC-2SC5200-O-AL-N-B Datasheet
571Kb/8P
Silicon NPN Triple Diffused Transistor
2SC5200-O-AL-N-D JSMC-2SC5200-O-AL-N-D Datasheet
571Kb/8P
Silicon NPN Triple Diffused Transistor

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2SC5200 Datasheet, PDF [Distributor]

DistributorPart # Manufacturer
Datasheet
DescriptionBuy Now
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Element14
2SC5200OTU

part
ONSEMI

TRANSISTOR, BIPOL, NPN, 250V, TO-264AA-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ce...
2SC5200OTU

part
ONSEMI

TRANSISTOR, BIPOL, NPN, 250V, TO-264AA-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ce...

2SC5200 Distributor

DistributorPart #ManufacturerDescriptionPriceQty.
BuyNow



Brief Description of 2SC5200


The 2SC5200 is a high-power NPN bipolar junction transistor (BJT) known for its use in audio amplifier and power amplifier applications. It is part of the 2SC series of transistors and is commonly used in high-fidelity audio amplifiers and professional audio equipment. Here are some key features and specifications of the 2SC5200 transistor:

Polarity: NPN (Negative-Positive-Negative).

The 2SC5200 has an N-type layer in the middle, sandwiched between P-type layers on the outside.
Maximum Collector Current (Ic): Typically rated at 15A.

This is the maximum current that can flow from the collector to the emitter when the transistor is in the on state.
Maximum Collector-Base Voltage (Vcbo): Typically rated at 230V.

This is the maximum voltage that can be applied between the collector and base terminals while keeping the emitter terminal open.
Maximum Collector-Emitter Voltage (Vceo): Typically rated at 230V.

This is the maximum voltage that can be applied between the collector and emitter terminals while the base is open.
Gain (hfe or Beta): Typically around 30 to 70.

The gain, denoted as hfe or Beta, represents the amplification capability of the transistor. It shows how much the collector current is amplified compared to the base current.
Package: The 2SC5200 is commonly available in TO-3P or TO-264 packages, which are suitable for high-power transistors and provide good thermal performance.

Applications: The 2SC5200 transistor is used in high-power applications, particularly in audio amplifiers, power amplifiers, and other applications that require high-current and high-voltage amplification.

Complementary Pair: The 2SC5200 is often used in conjunction with its complementary PNP transistor, such as the 2SA1943, to form a push-pull amplifier or switching pair for applications requiring bidirectional current flow.

Equivalent for 2SC5200


The 2SC5200 is a high-power NPN transistor commonly used in audio amplifier applications, offering a collector-emitter voltage of 230V and a collector current of 15A. Several transistors can serve as replacements, providing similar electrical characteristics:

TTC5200:

Manufactured by Toshiba as a direct replacement for the 2SC5200.
Features identical voltage and current ratings.
Available in a TO-3P package.
MJL3281A:

NPN transistor with a collector-emitter voltage of 200V and a collector current of 15A.
Designed for high-power audio applications.
Encapsulated in a TO-264 package.
FJL4315:

NPN transistor offering a collector-emitter voltage of 250V and a collector current of 17A.
Suitable for high-fidelity audio output stages.
Packaged in a TO-264 case.
2SC5242:

NPN transistor with a collector-emitter voltage of 230V and a collector current of 15A.
Commonly used in audio amplifier circuits.
Available in a TO-3P package.
2SC3320:

NPN transistor featuring a collector-emitter voltage of 200V and a collector current of 15A.
Utilized in various high-power applications.
Encapsulated in a TO-3P package.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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