2SC4793 Datasheet, PDF - Alldatasheet

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2SC4793 Datasheet, PDF

Search Partnumber : Match&Start with "2SC4793" - Total : 34 ( 1/2 Page)

Manufacturer	Part #	Datasheet	Description
Toshiba Semiconductor	2SC4793	147Kb/2P	NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)
Unisonic Technologies	2SC4793	46Kb/4P	NPN SILICON TRANSISTOR
Savantic, Inc.	2SC4793	246Kb/4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC4793	44Kb/3P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC4793	166Kb/4P	Silicon NPN Power Transistors
Unisonic Technologies	2SC4793	52Kb/4P	NPN SILICON TRANSISTOR
Toshiba Semiconductor	2SC4793	131Kb/4P	Power Amplifier Applications
Savantic, Inc.	2SC4793	247Kb/4P	Silicon NPN Power Transistors
JILIN SINO-MICROELECTRO...	2SC4793	219Kb/4P	Power Amplifier Applications
Micro Commercial Compon...	2SC4793	598Kb/3P	NPN Silicon Power Transistors
New Jersey Semi-Conduct...	2SC4793	122Kb/2P	Silicon NPN Power Transistor
Inchange Semiconductor ...	2SC4793	249Kb/2P	isc Silicon NPN Power Transistor
Thinki Semiconductor Co...	2SC4793	504Kb/3P	20 Watt Silicon Epitaxial Planar Process NPN Power Transistor
Toshiba Semiconductor	2SC4793	1Mb/73P	Bipolar Small-Signal Transistors
Quanzhou Jinmei Electro...	2SC4793	44Kb/3P	Silicon NPN Power Transistors
Unisonic Technologies	2SC4793	52Kb/4P	NPN SILICON TRANSISTOR
Shenzhen Luguang Electr...	2SC4793	1Mb/2P	Silicon NPN Power Transistor
JILIN SINO-MICROELECTRO...	2SC4793-O-MF-N-B	219Kb/4P	Power Amplifier Applications
Unisonic Technologies	2SC4793-TF3-T	46Kb/4P	NPN SILICON TRANSISTOR
Unisonic Technologies	2SC4793-X-TF3-T	52Kb/4P	NPN SILICON TRANSISTOR

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2SC4793 Datasheet, PDF [Distributor]

Distributor	Part #	Manufacturer Datasheet	Description	Buy Now
Element14	2SC4738-GR,LF(T	TOSHIBA	TRANS, BIPOLAR, NPN, 50V, 0.15A, SOT-416;
	2SC4738-GR,LF(T	TOSHIBA	TRANS, BIPOLAR, NPN, 50V, 0.15A, SOT-416;

2SC4793 Distributor

Distributor	Part #	Manufacturer	Description	Price	Qty. BuyNow

Brief Description of 2SC4793

The 2SC4793 is a high-voltage, high-speed NPN bipolar junction transistor (BJT) typically used in power amplifier and high-frequency applications. Here are the key features and specifications of the 2SC4793:

Transistor Type: The 2SC4793 is an NPN bipolar junction transistor, meaning it consists of three semiconductor layers: P-doped (base), N-doped (emitter), and P-doped (collector).

High Voltage Capability: The 2SC4793 is designed to handle relatively high collector-emitter voltage (VCEO) ratings, typically in the range of several hundred volts, making it suitable for use in applications requiring high voltage amplification.

High-Speed Switching: This transistor is capable of high-speed switching, making it suitable for use in high-frequency applications such as RF (radio frequency) amplifiers and oscillators.

High Power Dissipation: The 2SC4793 is capable of dissipating relatively high power levels due to its high voltage and current ratings, allowing it to be used in power amplifier circuits.

Low Saturation Voltage: It typically exhibits low saturation voltage (VCE(sat)), which is desirable for minimizing power losses and maximizing efficiency in switching applications.

High Current Gain: The 2SC4793 typically has high DC current gain (hFE), ensuring efficient amplification of input signals in amplifier circuits.

TO-220 Package: It is commonly available in a TO-220 package, which offers good thermal conductivity and mechanical robustness, making it suitable for use in various electronic circuits and heat sink mounting.

Application: The 2SC4793 is commonly used in audio amplifier circuits, high-frequency RF circuits, switching power supplies, and other applications requiring high voltage, high speed, and high power capabilities.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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