| Manufacturer | Part # | Datasheet | Description |
 Toshiba Semiconductor |
2SC3669
|
176Kb/4P
|
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
 Unisonic Technologies |
2SC3669
|
119Kb/3P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
 Toshiba Semiconductor |
2SC3669
|
140Kb/5P
|
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications
|
 Unisonic Technologies |
2SC3669
|
123Kb/3P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669G-X-AA3-R
|
294Kb/4P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669G-X-AB3-R
|
294Kb/4P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669G-X-TM3-T
|
294Kb/4P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669G-X-TN3-R
|
294Kb/4P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669L-X-TM3-T
|
294Kb/4P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669L-X-TN3-R
|
294Kb/4P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
 Toshiba Semiconductor |
2SC3669
|
140Kb/5P
|
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications
|
 Unisonic Technologies |
2SC3669
|
294Kb/4P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|
|
2SC3669
|
123Kb/3P
|
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
|