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Shortcut   12N60(327) recommended result.
Match, Like  12N60(15) H12N60(1) E12N60(4) F12N60(4) I12N60(4) 12N60A(1) 12N60C(1) 12N60F(2) 12N60G(1) 12N60H(1) 12N60K(1) 12N60T(1)
Start with  12N60*(47) 12N60A*(3) 12N60C*(1) 12N60G*(14) 12N60K*(7) 12N60L*(14)
End  *12N60(62) *F12N60(18) *A12N60(2) *B12N60(2) *I12N60(1) *P12N60(13) *T12N60(3) *W12N60(3) *S12N60(1) *H12N60(2) *M12N60(2) *R12N60(1) *G12N60(1)
Included  *12N60*(200) *12N60C*(2)
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12N60 Datasheet, PDF

Search Partnumber : Match&Start with "12N60" - Total : 65 ( 1/4 Page)
ManufacturerPart #DatasheetDescription
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Unisonic Technologies
12N60 UTC-12N60 Datasheet
235Kb/6P
12 Amps, 600/650 Volts N-CHANNEL MOSFET
12N60 UTC-12N60 Datasheet
358Kb/7P
12 Amps, 600/650 Volts N-CHANNEL MOSFET
12N60 UTC-12N60 Datasheet
371Kb/7P
12A, 600V N-CHANNEL POWER MOSFET
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Nell Semiconductor Co.,...
12N60 NELLSEMI-12N60 Datasheet
356Kb/7P
N-Channel Power MOSFET
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Inchange Semiconductor ...
12N60 ISC-12N60 Datasheet
136Kb/2P
Drain Current ?밒D= 12A@ TC=25C
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Chongqing Pingwei Enter...
12N60 CHONGQING-12N60 Datasheet
194Kb/2P
12A mps,600 Volts N-CHANNEL MOSFET
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DIYI Electronic Technol...
12N60 DYELEC-12N60 Datasheet
2Mb/9P
600V N-Channel Power MOSFET
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Zibo Seno Electronic En...
12N60 ZSELEC-12N60 Datasheet
820Kb/7P
N-CHANNEL POWER MOSFET
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SUNMATE electronic Co.,...
12N60 SUNMATE-12N60 Datasheet
2Mb/8P
N-CHANNEL POWER MOSFET
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VBsemi Electronics Co.,...
12N60 VBSEMI-12N60 Datasheet
1Mb/9P
N-Channel 650V (D-S) Power MOSFET
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Goford Semiconductor
12N60 GOFORD-12N60 Datasheet
863Kb/9P
600VN-Channel MOSFET GENERAL DESCRIPTION
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Jiangsu Donghai Semicon...
12N60 WXDH-12N60 Datasheet
898Kb/11P
12A 600V N-channel Enhancement Mode Power MOSFET
12N60 WXDH-12N60 Datasheet
897Kb/11P
12A 600V N-channel Enhancement Mode Power MOSFET
12N60 WXDH-12N60 Datasheet
897Kb/11P
12A 600V N-channel Enhancement Mode Power MOSFET
12N60 WXDH-12N60 Datasheet
898Kb/11P
12A 600V N-channel Enhancement Mode Power MOSFET
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DONGGUAN YOU FENG WEI E...
12N60A YFWDIODE-12N60A Datasheet
885Kb/5P
12A 600V N-channel enhanced field effect transistor
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Fairchild Semiconductor
12N60A4 FAIRCHILD-12N60A4 Datasheet
229Kb/8P
600V, SMPS Series N-Channel IGBTs
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Intersil Corporation
12N60A4D INTERSIL-12N60A4D Datasheet
394Kb/8P
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
November 1999
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Fairchild Semiconductor
12N60A4D FAIRCHILD-12N60A4D Datasheet
173Kb/8P
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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Unisonic Technologies
12N60C UTC-12N60C Datasheet
235Kb/6P
12 Amps, 600/650 Volts N-CHANNEL MOSFET

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12 3 4



12N60 Distributor

DistributorPart #ManufacturerDescriptionPriceQty.
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Brief Description of 12N60


The part number 12N60 generally refers to a specific type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). MOSFETs are widely used in both digital and analog circuits for their high input impedance and fast switching capabilities.

A 12N60 MOSFET typically would have the following characteristics:

Drain-to-Source Voltage (Vds): The 60 in 12N60 often indicates the maximum voltage it can handle between the drain and source terminals, which in this case would be 60 volts.

Continuous Drain Current (Id): The 12 can sometimes refer to the maximum continuous current the device can handle in amperes, which would be around 12 A.

Rds(on): This is the resistance between the drain and source when the MOSFET is turned on. Lower values are typically better for efficiency.

Gate Threshold Voltage (Vgs(th)): The voltage at which the MOSFET begins to turn on. This parameter is important for knowing at what gate voltage the device starts to conduct.

Total Power Dissipation (Pd): The maximum amount of power the MOSFET can dissipate without exceeding its maximum operating temperature.

Package: Common packages for power MOSFETs like the 12N60 include TO-220, TO-247, and others that can be mounted to a heatsink for thermal management.

Switching Speed: The time it takes for the MOSFET to turn on and off, which is critical for high-frequency switching applications.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.

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