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STGD3NB60F Datasheet (PDF) - STMicroelectronics

STGD3NB60F Datasheet PDF - STMicroelectronics
Part # STGD3NB60F
Download  STGD3NB60F Download
File Size   732.07 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH™ IGBT

STGD3NB60F Datasheet (PDF)

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STGD3NB60F Datasheet PDF - STMicroelectronics

Part # STGD3NB60F
Download  STGD3NB60F Click to download

File Size   732.07 Kbytes
Page   14 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH™ IGBT

STGD3NB60F Datasheet (HTML) - STMicroelectronics


STGD3NB60F Product details

DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “F” identifies a family optimized to achieve very low switching times for frequency applications (<40 KHz)

■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (Vcesat)
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED

APPLICATIONS
■ MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCHING AND RESONANT TOPOLOGIES




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About STMicroelectronics


STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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