| Manufacturer | Part # | Datasheet | Description |
 ON Semiconductor |
BUL642D2
|
101Kb / 8P |
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector?묮mitter and Built?뭝n Efficient Antisaturation Network
August, 2005 ??Rev. 1 |
 Diodes Incorporated |
ZXTN26020DMF
|
141Kb / 6P |
HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR
DS31953 Rev. 2 - 1 |
 ON Semiconductor |
BUD42D
|
184Kb / 12P |
High Speed, High Gain Bipolar NPN Transistor
January, 2011 ??Rev. 5 |
|
BUL45D2G
|
248Kb / 11P |
High Speed, High Gain Bipolar NPN Power Transistor
April, 2010 ??Rev. 5 |
 Diodes Incorporated |
ZXTN26020DMF
|
141Kb / 6P |
HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR
Rev 2 |
 ON Semiconductor |
BUL45D2
|
227Kb / 11P |
High Speed, High Gain Bipolar NPN Power Transistor
November, 2014 ??Rev. 8 |
 IXYS Corporation |
MMIX4B22N300
|
238Kb / 6P |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
|
IXBA14N300HV
|
365Kb / 6P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
|
IXBF32N300
|
201Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
|
IXBH20N300
|
180Kb / 5P |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|