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STH315N10F7-6 Datasheet (PDF) - STMicroelectronics
STH315N10F7-6 Datasheet PDF - STMicroelectronics
Part # STH315N10F7-6
Download  STH315N10F7-6 Download
File Size   1146.38 Kbytes
Page   19 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET™ F7 Power MOSFETs

STH315N10F7-6 Datasheet (PDF)

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STH315N10F7-6 Datasheet PDF - STMicroelectronics

Part # STH315N10F7-6
Download  STH315N10F7-6 Click to download

File Size   1146.38 Kbytes
Page   19 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Automotive-grade N-channel 100 V, 2.1 mΩ typ., 180 A STripFET™ F7 Power MOSFETs

STH315N10F7-6 Datasheet (HTML) - STMicroelectronics


STH315N10F7-6 Product details

Description
These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 1 TAB 3 2 H PAK-2 2 H PAK-6 2 1 TAB 7

Features
■ Designed for automotive applications and AEC-Q101 qualified
■ Among the lowest RDS(on) on the market
■ Excellent figure of merit (FoM)
■ Low Crss/Ciss ratio for EMI immunity
■ High avalanche ruggedness

Applications
■ Switching applications




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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