Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. 1 3 TAB D2PAK TO-247 1 2 3 !-V 4!"

Features
■ Designed for automotive applications and AEC-Q101 qualified
■ The worldwide best RDS(on)*area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities

Applications
■ Switching applications