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2SD1062 Datasheet (PDF) - ON Semiconductor
2SD1062 Datasheet PDF - ON Semiconductor
Part # 2SD1062
Download  2SD1062 Download
File Size   101.41 Kbytes
Page   4 Pages
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor
Description 50V / 12A Switching Applications

2SD1062 Datasheet (PDF)

Go To PDF Page Download Datasheet
2SD1062 Datasheet PDF - ON Semiconductor

Part # 2SD1062
Download  2SD1062 Click to download

File Size   101.41 Kbytes
Page   4 Pages
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor
Description 50V / 12A Switching Applications

2SD1062 Datasheet (HTML) - ON Semiconductor


2SD1062 Product details

Features
• Low-saturation collector-to-emitter voltage : VCE(sat)= --0.5V(PNP), 0.4V(NPN) max.
• Wide ASO leading to high resistance to breakdown.

Applications
• Relay drivers, high-speed inverters, converters, and other general high-current switching applications.




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About ON Semiconductor

ON Semiconductor is a publicly traded company that designs, develops, and manufactures a wide range of semiconductor products for various applications, including automotive, computing, consumer, industrial, and communications markets.
The company was founded in 1999 and is headquartered in Phoenix, Arizona.
ON Semiconductor offers a broad portfolio of power management, analog, and discrete semiconductors, including power MOSFETs, diodes, rectifiers, and voltage regulators, among others.
The company's products are designed to be energy efficient, reliable, and cost-effective, and are used in a variety of applications, including portable electronics, industrial automation systems, renewable energy systems, and automotive electronics.
ON Semiconductor is dedicated to innovation and customer satisfaction, and is committed to providing its customers with the best semiconductor solutions to meet their needs.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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